Vapor phase epitaxial materials for LED applications

The growth and performance of vapor phase epitaxial (VPE) III-V materials and devices for light-emitting diode (LED) and display applications are reviewed. Because of the commercial importance of the GaAsP ternary alloys and GaP, this paper is primarily concerned with these materials. With the addit...

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Veröffentlicht in:	Proceedings of the IEEE 1973-01, Vol.61 (7), p.862-880
Hauptverfasser:	Craford, M.G., Groves, W.O.
Format:	Artikel
Sprache:	eng
Schlagworte:	Defense industry Displays Doping Fabrication Gallium nitride III-V semiconductor materials Light emitting diodes Nitrogen Textile industry Zinc
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