Beam-lead devices and integrated circuits
Gespeichert in:
| Veröffentlicht in: | Proceedings of the IEEE 1965-04, Vol.53 (4), p.405-405 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 405 |
|---|---|
| container_issue | 4 |
| container_start_page | 405 |
| container_title | Proceedings of the IEEE |
| container_volume | 53 |
| creator | Lepselter, M.P. Waggener, H.A. MacDonald, R.W. Davis, R.E. |
| description | |
| doi_str_mv | 10.1109/PROC.1965.3772 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_ieee_primary_1445702</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1445702</ieee_id><sourcerecordid>10_1109_PROC_1965_3772</sourcerecordid><originalsourceid>FETCH-LOGICAL-c174t-9796bbff610df0d4b23d822bdc317bb439744459704c67d43ae3e50a2c2a504c3</originalsourceid><addsrcrecordid>eNpFjztLBDEUhYMoOK62NjbTWmS8eU9KXXzBwopoHfK4I5HdVZJR8N87wwpWBw7nwUfIOYOOMbBXT8_rZcesVp0whh-QhinVU86VPiQNAOup5cwek5Na3wFAKC0acnmDfks36FOb8DtHrK3fpTbvRnwrfsTUxlziVx7rKTka_Kbi2Z8uyOvd7cvyga7W94_L6xWNzMiRWmN1CMOgGaQBkgxcpJ7zkKJgJgQprJFSKmtARm2SFB4FKvA8cq8mTyxIt9-N5aPWgoP7LHnry49j4GZQN4O6GdTNoFPhYl_IiPgfnk4McPELfJVNrA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Beam-lead devices and integrated circuits</title><source>IEEE Xplore</source><creator>Lepselter, M.P. ; Waggener, H.A. ; MacDonald, R.W. ; Davis, R.E.</creator><creatorcontrib>Lepselter, M.P. ; Waggener, H.A. ; MacDonald, R.W. ; Davis, R.E.</creatorcontrib><identifier>ISSN: 0018-9219</identifier><identifier>EISSN: 1558-2256</identifier><identifier>DOI: 10.1109/PROC.1965.3772</identifier><identifier>CODEN: IEEPAD</identifier><language>eng</language><publisher>IEEE</publisher><subject>Application specific integrated circuits ; Bonding ; Contacts ; Molecular beam epitaxial growth ; Out of order ; Resistors ; Satellite broadcasting ; Silicon ; Substrates ; Wire</subject><ispartof>Proceedings of the IEEE, 1965-04, Vol.53 (4), p.405-405</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c174t-9796bbff610df0d4b23d822bdc317bb439744459704c67d43ae3e50a2c2a504c3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1445702$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1445702$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lepselter, M.P.</creatorcontrib><creatorcontrib>Waggener, H.A.</creatorcontrib><creatorcontrib>MacDonald, R.W.</creatorcontrib><creatorcontrib>Davis, R.E.</creatorcontrib><title>Beam-lead devices and integrated circuits</title><title>Proceedings of the IEEE</title><addtitle>JPROC</addtitle><subject>Application specific integrated circuits</subject><subject>Bonding</subject><subject>Contacts</subject><subject>Molecular beam epitaxial growth</subject><subject>Out of order</subject><subject>Resistors</subject><subject>Satellite broadcasting</subject><subject>Silicon</subject><subject>Substrates</subject><subject>Wire</subject><issn>0018-9219</issn><issn>1558-2256</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1965</creationdate><recordtype>article</recordtype><recordid>eNpFjztLBDEUhYMoOK62NjbTWmS8eU9KXXzBwopoHfK4I5HdVZJR8N87wwpWBw7nwUfIOYOOMbBXT8_rZcesVp0whh-QhinVU86VPiQNAOup5cwek5Na3wFAKC0acnmDfks36FOb8DtHrK3fpTbvRnwrfsTUxlziVx7rKTka_Kbi2Z8uyOvd7cvyga7W94_L6xWNzMiRWmN1CMOgGaQBkgxcpJ7zkKJgJgQprJFSKmtARm2SFB4FKvA8cq8mTyxIt9-N5aPWgoP7LHnry49j4GZQN4O6GdTNoFPhYl_IiPgfnk4McPELfJVNrA</recordid><startdate>196504</startdate><enddate>196504</enddate><creator>Lepselter, M.P.</creator><creator>Waggener, H.A.</creator><creator>MacDonald, R.W.</creator><creator>Davis, R.E.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>196504</creationdate><title>Beam-lead devices and integrated circuits</title><author>Lepselter, M.P. ; Waggener, H.A. ; MacDonald, R.W. ; Davis, R.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c174t-9796bbff610df0d4b23d822bdc317bb439744459704c67d43ae3e50a2c2a504c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1965</creationdate><topic>Application specific integrated circuits</topic><topic>Bonding</topic><topic>Contacts</topic><topic>Molecular beam epitaxial growth</topic><topic>Out of order</topic><topic>Resistors</topic><topic>Satellite broadcasting</topic><topic>Silicon</topic><topic>Substrates</topic><topic>Wire</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lepselter, M.P.</creatorcontrib><creatorcontrib>Waggener, H.A.</creatorcontrib><creatorcontrib>MacDonald, R.W.</creatorcontrib><creatorcontrib>Davis, R.E.</creatorcontrib><collection>CrossRef</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lepselter, M.P.</au><au>Waggener, H.A.</au><au>MacDonald, R.W.</au><au>Davis, R.E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Beam-lead devices and integrated circuits</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>1965-04</date><risdate>1965</risdate><volume>53</volume><issue>4</issue><spage>405</spage><epage>405</epage><pages>405-405</pages><issn>0018-9219</issn><eissn>1558-2256</eissn><coden>IEEPAD</coden><pub>IEEE</pub><doi>10.1109/PROC.1965.3772</doi><tpages>1</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9219 |
| ispartof | Proceedings of the IEEE, 1965-04, Vol.53 (4), p.405-405 |
| issn | 0018-9219 1558-2256 |
| language | eng |
| recordid | cdi_ieee_primary_1445702 |
| source | IEEE Xplore |
| subjects | Application specific integrated circuits Bonding Contacts Molecular beam epitaxial growth Out of order Resistors Satellite broadcasting Silicon Substrates Wire |
| title | Beam-lead devices and integrated circuits |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T15%3A45%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Beam-lead%20devices%20and%20integrated%20circuits&rft.jtitle=Proceedings%20of%20the%20IEEE&rft.au=Lepselter,%20M.P.&rft.date=1965-04&rft.volume=53&rft.issue=4&rft.spage=405&rft.epage=405&rft.pages=405-405&rft.issn=0018-9219&rft.eissn=1558-2256&rft.coden=IEEPAD&rft_id=info:doi/10.1109/PROC.1965.3772&rft_dat=%3Ccrossref_RIE%3E10_1109_PROC_1965_3772%3C/crossref_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1445702&rfr_iscdi=true |