Exploring the limits of low cost, organics-compatible high-k ceramic thin films for embedded decoupling applications

Exploring the limits of low cost, organics-compatible high-k ceramic thin films for embedded decoupling applications

This paper presents four organic-compatible thin film processing techniques for embedding capacitors into organic PWBs. Hydrothermal synthesis allows integration of pure nano-grained barium titanate films with capacitance density of about 1 /spl mu/F/cm/sup 2/. Sol-gel and RF-sputtering in conjuncti...

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Hauptverfasser: Balaraman, D., Raj, P.M., Abothu, R., Bhattacharya, S., Sacks, M., Lance, M., Meyer, H., Swaminathan, M., Tumrnala, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Barium
Capacitance
Capacitors
Ceramics
Costs
Dielectric thin films
High K dielectric materials
High-K gate dielectrics
Titanium compounds
Transistors
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container_start_page 1215
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creator Balaraman, D.
Raj, P.M.
Abothu, R.
Bhattacharya, S.
Sacks, M.
Lance, M.
Meyer, H.
Swaminathan, M.
Tumrnala, R.
description This paper presents four organic-compatible thin film processing techniques for embedding capacitors into organic PWBs. Hydrothermal synthesis allows integration of pure nano-grained barium titanate films with capacitance density of about 1 /spl mu/F/cm/sup 2/. Sol-gel and RF-sputtering in conjunction with a foil transfer process can be used to integrate a variety of perovskite thin films with the capacitance in the range of 200-400 nF/cm/sup 2/. Thermal oxidation of titanium foil also emerges as a viable process for integrating capacitance of 100s of nF using a foil transfer process. The dielectric properties of the films synthesized by these techniques as a function of various process parameters are presented. Observed dielectric properties like dielectric constant, leakage current and breakdown strengths have been correlated to structural defects and stoichiometry of the films.
doi_str_mv 10.1109/ECTC.2005.1441425
format Conference Proceeding
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Hydrothermal synthesis allows integration of pure nano-grained barium titanate films with capacitance density of about 1 /spl mu/F/cm/sup 2/. Sol-gel and RF-sputtering in conjunction with a foil transfer process can be used to integrate a variety of perovskite thin films with the capacitance in the range of 200-400 nF/cm/sup 2/. Thermal oxidation of titanium foil also emerges as a viable process for integrating capacitance of 100s of nF using a foil transfer process. The dielectric properties of the films synthesized by these techniques as a function of various process parameters are presented. Observed dielectric properties like dielectric constant, leakage current and breakdown strengths have been correlated to structural defects and stoichiometry of the films.</description><identifier>ISSN: 0569-5503</identifier><identifier>ISBN: 0780389077</identifier><identifier>ISBN: 9780780389076</identifier><identifier>EISSN: 2377-5726</identifier><identifier>DOI: 10.1109/ECTC.2005.1441425</identifier><language>eng</language><publisher>IEEE</publisher><subject>Barium ; Capacitance ; Capacitors ; Ceramics ; Costs ; Dielectric thin films ; High K dielectric materials ; High-K gate dielectrics ; Titanium compounds ; Transistors</subject><ispartof>Proceedings Electronic Components and Technology, 2005. 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ECTC '05</btitle><stitle>ECTC</stitle><date>2005</date><risdate>2005</risdate><spage>1215</spage><epage>1221 Vol. 2</epage><pages>1215-1221 Vol. 2</pages><issn>0569-5503</issn><eissn>2377-5726</eissn><isbn>0780389077</isbn><isbn>9780780389076</isbn><abstract>This paper presents four organic-compatible thin film processing techniques for embedding capacitors into organic PWBs. Hydrothermal synthesis allows integration of pure nano-grained barium titanate films with capacitance density of about 1 /spl mu/F/cm/sup 2/. Sol-gel and RF-sputtering in conjunction with a foil transfer process can be used to integrate a variety of perovskite thin films with the capacitance in the range of 200-400 nF/cm/sup 2/. Thermal oxidation of titanium foil also emerges as a viable process for integrating capacitance of 100s of nF using a foil transfer process. The dielectric properties of the films synthesized by these techniques as a function of various process parameters are presented. Observed dielectric properties like dielectric constant, leakage current and breakdown strengths have been correlated to structural defects and stoichiometry of the films.</abstract><pub>IEEE</pub><doi>10.1109/ECTC.2005.1441425</doi></addata></record>
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Barium
Capacitance
Capacitors
Ceramics
Costs
Dielectric thin films
High K dielectric materials
High-K gate dielectrics
Titanium compounds
Transistors
title Exploring the limits of low cost, organics-compatible high-k ceramic thin films for embedded decoupling applications
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