The annealing effect of Schottky contact on AlGaN/GaN
The AlGaN/GaN samples were grown on sapphire substrates by MOCVD. A Ti/Al/Ti/Au multi-layer film and Ni/Au bi-layer film were sputtered for ohmic contact and Schottky contact respectively. The optimal annealing temperature of the Schottky contact was determined as 450/spl deg/C. The ideality factor...
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| creator | Zhou, J. Hao, Y.L. Yang, Z.J. Zhang, G.Y. Wu, G.Y. |
| description | The AlGaN/GaN samples were grown on sapphire substrates by MOCVD. A Ti/Al/Ti/Au multi-layer film and Ni/Au bi-layer film were sputtered for ohmic contact and Schottky contact respectively. The optimal annealing temperature of the Schottky contact was determined as 450/spl deg/C. The ideality factor and Schottky barrier height were calculated out from the I-V curves of the Schottky contact. One fitting formula for the leakage current of the Schottky contact was set up and its parameters dependence on the annealing temperature were discussed. The parameter A was linear with the negative SBH, and the parameter B was related to the GaN material intrinsic factors. |
| doi_str_mv | 10.1109/ICSICT.2004.1435300 |
| format | Conference Proceeding |
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A Ti/Al/Ti/Au multi-layer film and Ni/Au bi-layer film were sputtered for ohmic contact and Schottky contact respectively. The optimal annealing temperature of the Schottky contact was determined as 450/spl deg/C. The ideality factor and Schottky barrier height were calculated out from the I-V curves of the Schottky contact. One fitting formula for the leakage current of the Schottky contact was set up and its parameters dependence on the annealing temperature were discussed. The parameter A was linear with the negative SBH, and the parameter B was related to the GaN material intrinsic factors.</description><identifier>ISBN: 078038511X</identifier><identifier>ISBN: 9780780385115</identifier><identifier>DOI: 10.1109/ICSICT.2004.1435300</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum gallium nitride ; Annealing ; Fitting ; Gallium nitride ; Gold ; MOCVD ; Ohmic contacts ; Schottky barriers ; Substrates ; Temperature</subject><ispartof>Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004, 2004, Vol.3, p.2280-2283 vol.3</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1435300$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1435300$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zhou, J.</creatorcontrib><creatorcontrib>Hao, Y.L.</creatorcontrib><creatorcontrib>Yang, Z.J.</creatorcontrib><creatorcontrib>Zhang, G.Y.</creatorcontrib><creatorcontrib>Wu, G.Y.</creatorcontrib><title>The annealing effect of Schottky contact on AlGaN/GaN</title><title>Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004</title><addtitle>ICSICT</addtitle><description>The AlGaN/GaN samples were grown on sapphire substrates by MOCVD. A Ti/Al/Ti/Au multi-layer film and Ni/Au bi-layer film were sputtered for ohmic contact and Schottky contact respectively. The optimal annealing temperature of the Schottky contact was determined as 450/spl deg/C. The ideality factor and Schottky barrier height were calculated out from the I-V curves of the Schottky contact. One fitting formula for the leakage current of the Schottky contact was set up and its parameters dependence on the annealing temperature were discussed. The parameter A was linear with the negative SBH, and the parameter B was related to the GaN material intrinsic factors.</description><subject>Aluminum gallium nitride</subject><subject>Annealing</subject><subject>Fitting</subject><subject>Gallium nitride</subject><subject>Gold</subject><subject>MOCVD</subject><subject>Ohmic contacts</subject><subject>Schottky barriers</subject><subject>Substrates</subject><subject>Temperature</subject><isbn>078038511X</isbn><isbn>9780780385115</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8FqwzAQRAWlkDbNF-SiH7Cza0mWdQymTQ0hPcSF3sJaWiVuXbvEvuTvm9IMDA_m8GCEWCKkiOBWVbmvyjrNAHSKWhkFcCcewRagCoP4MROLcfyEa5TLjcsehKlPLKnvmbq2P0qOkf0khyj3_jRM09dF-qGf6G_r5brb0G517ZO4j9SNvLhxLt5fnuvyNdm-bapyvU1aBDMlRjWRAPKQWx-KTIeMbeEp14RZYyKCjuTI2hA5MGpsbCBo8hgUovaFU3Ox_Pe2zHz4ObffdL4cbs_UL2uoQ6U</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Zhou, J.</creator><creator>Hao, Y.L.</creator><creator>Yang, Z.J.</creator><creator>Zhang, G.Y.</creator><creator>Wu, G.Y.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2004</creationdate><title>The annealing effect of Schottky contact on AlGaN/GaN</title><author>Zhou, J. ; Hao, Y.L. ; Yang, Z.J. ; Zhang, G.Y. ; Wu, G.Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-53bfa006d67cd824d2e78ca64a12b5f104fa9a77dfede141b7da0b6fd3114c893</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Aluminum gallium nitride</topic><topic>Annealing</topic><topic>Fitting</topic><topic>Gallium nitride</topic><topic>Gold</topic><topic>MOCVD</topic><topic>Ohmic contacts</topic><topic>Schottky barriers</topic><topic>Substrates</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhou, J.</creatorcontrib><creatorcontrib>Hao, Y.L.</creatorcontrib><creatorcontrib>Yang, Z.J.</creatorcontrib><creatorcontrib>Zhang, G.Y.</creatorcontrib><creatorcontrib>Wu, G.Y.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhou, J.</au><au>Hao, Y.L.</au><au>Yang, Z.J.</au><au>Zhang, G.Y.</au><au>Wu, G.Y.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The annealing effect of Schottky contact on AlGaN/GaN</atitle><btitle>Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004</btitle><stitle>ICSICT</stitle><date>2004</date><risdate>2004</risdate><volume>3</volume><spage>2280</spage><epage>2283 vol.3</epage><pages>2280-2283 vol.3</pages><isbn>078038511X</isbn><isbn>9780780385115</isbn><abstract>The AlGaN/GaN samples were grown on sapphire substrates by MOCVD. A Ti/Al/Ti/Au multi-layer film and Ni/Au bi-layer film were sputtered for ohmic contact and Schottky contact respectively. The optimal annealing temperature of the Schottky contact was determined as 450/spl deg/C. The ideality factor and Schottky barrier height were calculated out from the I-V curves of the Schottky contact. One fitting formula for the leakage current of the Schottky contact was set up and its parameters dependence on the annealing temperature were discussed. The parameter A was linear with the negative SBH, and the parameter B was related to the GaN material intrinsic factors.</abstract><pub>IEEE</pub><doi>10.1109/ICSICT.2004.1435300</doi></addata></record> |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aluminum gallium nitride Annealing Fitting Gallium nitride Gold MOCVD Ohmic contacts Schottky barriers Substrates Temperature |
| title | The annealing effect of Schottky contact on AlGaN/GaN |
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