A novel buried lightly doped drain CMOS design for optimizing hot carrier versus device performance

A novel and unique buried lightly doped drain (BLDD) design for nMOSFET technology is demonstrated in this paper. This design significantly reduces the maximum electric field at the drain edge thus lowering hot carrier degradation while minimizing the impact on key transistor parameters. This unique...

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Bibliographische Detailangaben

Hauptverfasser:	Thomason, M., Nelson, M., Greenwood, B., Jagdish Prasad, Steidley, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Ambient intelligence CMOS technology Design optimization Electric breakdown Electrons Hot carrier injection Hot carriers Implants MOSFETs Silicon
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