Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectors

The impulse response of interdigitated metal-semiconductor-metal photodetectors fabricated on an Fe-doped InGaAs absorbing layer and an Fe-doped InP barrier enhancement layer is investigated. For ultra-short pulse excitation of 150 fs at lambda =620 nm the photoresponse is found to be less than 13 p...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of lightwave technology 1992-06, Vol.10 (6), p.753-759
Hauptverfasser:	Kuhl, D., Hieronymi, F., Bottcher, E.H., Wolf, T., Bimberg, D., Kuhl, J., Klingenstein, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Detectors Electronics Exact sciences and technology FETs Fingers Indium gallium arsenide Indium phosphide Lattices Lighting Optical pulses Optoelectronic devices Photodetectors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Space charge
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!