Design of amplifier- and modulator-integrated laser diode for 10-Gb/s 80-km transmission
We present the amplifier- and modulator-integrated laser diode designed for 10-Gb/s transmission over 80-km distance. An antireflection window structure is implemented at the tilt facet of the amplifier to reduce optical feedback by 40 dB. A monitor photodiode is monolithically integrated in the ant...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2005-03, Vol.11 (2), p.323-328 |
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| container_end_page | 328 |
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| container_issue | 2 |
| container_start_page | 323 |
| container_title | IEEE journal of selected topics in quantum electronics |
| container_volume | 11 |
| creator | Kim, In Kang, Byung-Kwon Bae, Yu-Dong Park, Byeonghoon Lee, Sang-Moon Kim, Young Hyun Jang, Dong-Hoon |
| description | We present the amplifier- and modulator-integrated laser diode designed for 10-Gb/s transmission over 80-km distance. An antireflection window structure is implemented at the tilt facet of the amplifier to reduce optical feedback by 40 dB. A monitor photodiode is monolithically integrated in the antireflection window region for accurate power regulation. To better control the amplifier input power and to reduce the feedback of amplified spontaneous emission, an attenuation inner-window is incorporated by removing a section of the waveguide. The reproducibility of the chip fabrication process is tested to confirm the design margin. Through amplifying the modulated signals and reducing modulator chirp by amplifier saturation, high-power optical transmission is demonstrated. |
| doi_str_mv | 10.1109/JSTQE.2005.845615 |
| format | Article |
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An antireflection window structure is implemented at the tilt facet of the amplifier to reduce optical feedback by 40 dB. A monitor photodiode is monolithically integrated in the antireflection window region for accurate power regulation. To better control the amplifier input power and to reduce the feedback of amplified spontaneous emission, an attenuation inner-window is incorporated by removing a section of the waveguide. The reproducibility of the chip fabrication process is tested to confirm the design margin. 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(IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-77064b3afec50c5aa9ce2e202955403a314608398ae24003090d5e967f8bf33e3</citedby><cites>FETCH-LOGICAL-c355t-77064b3afec50c5aa9ce2e202955403a314608398ae24003090d5e967f8bf33e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1425467$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1425467$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, In</creatorcontrib><creatorcontrib>Kang, Byung-Kwon</creatorcontrib><creatorcontrib>Bae, Yu-Dong</creatorcontrib><creatorcontrib>Park, Byeonghoon</creatorcontrib><creatorcontrib>Lee, Sang-Moon</creatorcontrib><creatorcontrib>Kim, Young Hyun</creatorcontrib><creatorcontrib>Jang, Dong-Hoon</creatorcontrib><title>Design of amplifier- and modulator-integrated laser diode for 10-Gb/s 80-km transmission</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>We present the amplifier- and modulator-integrated laser diode designed for 10-Gb/s transmission over 80-km distance. An antireflection window structure is implemented at the tilt facet of the amplifier to reduce optical feedback by 40 dB. A monitor photodiode is monolithically integrated in the antireflection window region for accurate power regulation. To better control the amplifier input power and to reduce the feedback of amplified spontaneous emission, an attenuation inner-window is incorporated by removing a section of the waveguide. The reproducibility of the chip fabrication process is tested to confirm the design margin. Through amplifying the modulated signals and reducing modulator chirp by amplifier saturation, high-power optical transmission is demonstrated.</description><subject>Amplification</subject><subject>Amplifiers</subject><subject>Attenuators</subject><subject>Chips (electronics)</subject><subject>Chirp modulation</subject><subject>Diode lasers</subject><subject>distributed feedback lasers</subject><subject>electroabsorption</subject><subject>Feedback</subject><subject>Laser diodes</subject><subject>Monitoring</subject><subject>Monitors</subject><subject>monolithic integrated circuits</subject><subject>Noise levels</subject><subject>Optical amplifiers</subject><subject>Optical attenuators</subject><subject>Optical design</subject><subject>Optical feedback</subject><subject>Optical waveguides</subject><subject>photodetectors</subject><subject>Photodiodes</subject><subject>Semiconductor optical amplifiers</subject><subject>Spontaneous emission</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1LxDAQhoso-PkDxEvwoKesk68mOYrfIoi4wt5Ctp1KtG3WpHvw39t1BcGDp5nD8z7M8BbFIYMJY2DP7p-nT1cTDqAmRqqSqY1ihyllqFSSb447aE15CbPtYjfnNwAw0sBOMbvEHF57Ehviu0UbmoCJEt_XpIv1svVDTDT0A74mP2BNWp8xkTrEGkkTE2FAb-ZnmRig7x0Zku9zF3IOsd8vthrfZjz4mXvFy_XV9OKWPjze3F2cP9BKKDVQraGUc-EbrBRUyntbIUcO3ColQXjBZAlGWOORSwABFmqFttSNmTdCoNgrTtfeRYofS8yDGw-osG19j3GZnbElG10lG8mTf0luAEaxGsHjP-BbXKZ-_MJZxqzWQq9sbA1VKeacsHGLFDqfPh0Dt6rEfVfiVpW4dSVj5midCYj4y0uuZKnFF0zlhXM</recordid><startdate>20050301</startdate><enddate>20050301</enddate><creator>Kim, In</creator><creator>Kang, Byung-Kwon</creator><creator>Bae, Yu-Dong</creator><creator>Park, Byeonghoon</creator><creator>Lee, Sang-Moon</creator><creator>Kim, Young Hyun</creator><creator>Jang, Dong-Hoon</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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An antireflection window structure is implemented at the tilt facet of the amplifier to reduce optical feedback by 40 dB. A monitor photodiode is monolithically integrated in the antireflection window region for accurate power regulation. To better control the amplifier input power and to reduce the feedback of amplified spontaneous emission, an attenuation inner-window is incorporated by removing a section of the waveguide. The reproducibility of the chip fabrication process is tested to confirm the design margin. Through amplifying the modulated signals and reducing modulator chirp by amplifier saturation, high-power optical transmission is demonstrated.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSTQE.2005.845615</doi><tpages>6</tpages></addata></record> |
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| ispartof | IEEE journal of selected topics in quantum electronics, 2005-03, Vol.11 (2), p.323-328 |
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| subjects | Amplification Amplifiers Attenuators Chips (electronics) Chirp modulation Diode lasers distributed feedback lasers electroabsorption Feedback Laser diodes Monitoring Monitors monolithic integrated circuits Noise levels Optical amplifiers Optical attenuators Optical design Optical feedback Optical waveguides photodetectors Photodiodes Semiconductor optical amplifiers Spontaneous emission |
| title | Design of amplifier- and modulator-integrated laser diode for 10-Gb/s 80-km transmission |
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