Influence of facet coating on the dual wavelength operation of asymmetric InGaAs-GaAs quantum-well lasers

A low-reflectivity SiN/sub y/O/sub z/ film was deposited on one facet of asymmetric In /sub x/Ga/sub 1-x/As-GaAs quantum-well (QW) laser diodes containing three different QW compositions with the indium fractions x=0.25,0.21, and 0.15, located, respectively, from the n-doped to p-doped sides of the...

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Veröffentlicht in:	IEEE journal of quantum electronics 2005-05, Vol.41 (5), p.625-629
Hauptverfasser:	Weihong Jiang, Thompson, D.A., Robinson, B.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Asymmetry Coatings Devices Diode lasers Diodes Emission Exact sciences and technology Facet coatings Fundamental areas of phenomenology (including applications) Gallium arsenide Laser theory Laser transitions Lasers Lasing Optical coatings Optical elements, devices, and systems Optics Physics Pump lasers Quantum well lasers Quantum wells quantum-well (QW) devices QW lasers Reflectivity Semiconductor diodes Semiconductor lasers Semiconductor lasers laser diodes Wavelengths
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