Silicon on thin BOX: a new paradigm of the CMOSFET for low-power high-performance application featuring wide-range back-bias control

We demonstrate a new MOSFET on ultra-thin BOX that allows wide-range back-bias control in low-power and high-performance applications. The back gate is effective not only to increase the drive current by about 20% in active mode but also in reduce the off-current by an order of magnitude in stand-by...

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Hauptverfasser:	Tsuchiya, R., Horiuchi, M., Kimura, S., Yamaoka, M., Kawahara, T., Maegawa, S., Ipposhi, T., Ohji, Y., Matsuoka, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Centralized control CMOS technology CMOSFETs Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Ion implantation Magnetic and optical mass memories Microelectronic fabrication (materials and surfaces technology) MOSFET circuits Power MOSFET Random access memory Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Storage and reproduction of information Threshold voltage Transistors Voltage control
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