Ultra-wideband three dimensional transitions for on-wafer packages

Ultra-wideband three dimensional transitions for on-wafer packages

A silicon micromachined on-wafer DC to 65 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.6 dB up to 65 GHz (less than 0.1 dB after deemhedding the losses of the feeding line) and a return lass helow -10 dB up to 70 GHz...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Margomenos, A., Katehi, L.P.B.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Fabrication
Gallium arsenide
Insertion loss
Integrated circuit interconnections
Packaging
Radio frequency
Radiofrequency microelectromechanical systems
Silicon
Testing
Ultra wideband technology
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Beschreibung
Zusammenfassung:A silicon micromachined on-wafer DC to 65 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.6 dB up to 65 GHz (less than 0.1 dB after deemhedding the losses of the feeding line) and a return lass helow -10 dB up to 70 GHz. Based on the same teehnology, a more advanced RF transition is proposed. This new vertical interconnect design offers unprecedented fleribility for the fabrication of on-wafer packaged devices, for frequencies up to 65 GHz.