Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs
The light sensitivity of current deep-level transient spectroscopy (I-DLTS) is analyzed with the aim of gaining insight about the physics of surface-trap related dc-to-RF dispersion effects in AlGaAs-GaAs heterostructure field-effect transistors. I-DLTS experiments under dark reveals three surface-t...
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| Veröffentlicht in: | IEEE transactions on electron devices 2005-04, Vol.52 (4), p.594-602 |
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| creator | Verzellesi, G. Basile, A.F. Cavallini, A. Castaldini, A. Chini, A. Canali, C. |
| description | The light sensitivity of current deep-level transient spectroscopy (I-DLTS) is analyzed with the aim of gaining insight about the physics of surface-trap related dc-to-RF dispersion effects in AlGaAs-GaAs heterostructure field-effect transistors. I-DLTS experiments under dark reveals three surface-trap levels with activation energies 0.44 eV (h1), 0.59 eV (h2), and 0.85 eV (h3), as well as a bulk trap with activation energy 0.45 eV (e1). While the I-DLTS signal peaks associated with the two shallower surface traps h1 and h2 are suppressed by optical illumination with energy larger than the AlGaAs bandgap, that which is associated with the deepest surface trap h3 is nearly unaffected by light up to the highest intensity adopted. Two-dimensional device simulations assuming that surface traps behave as hole traps provide an interpretation for the observed different light sensitivity of surface traps, explaining it as the result of the temperature dependence of surface hole concentration and negative trap-charge density, making trap-charge modulation at increasing temperature less and less sensitive to excess carriers generated by light. |
| doi_str_mv | 10.1109/TED.2005.845149 |
| format | Article |
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I-DLTS experiments under dark reveals three surface-trap levels with activation energies 0.44 eV (h1), 0.59 eV (h2), and 0.85 eV (h3), as well as a bulk trap with activation energy 0.45 eV (e1). While the I-DLTS signal peaks associated with the two shallower surface traps h1 and h2 are suppressed by optical illumination with energy larger than the AlGaAs bandgap, that which is associated with the deepest surface trap h3 is nearly unaffected by light up to the highest intensity adopted. Two-dimensional device simulations assuming that surface traps behave as hole traps provide an interpretation for the observed different light sensitivity of surface traps, explaining it as the result of the temperature dependence of surface hole concentration and negative trap-charge density, making trap-charge modulation at increasing temperature less and less sensitive to excess carriers generated by light.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2005.845149</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Activation energy ; Aluminum compounds ; Aluminum gallium arsenides ; Applied sciences ; Charge carrier density ; Charge carrier lifetime ; Density ; Devices ; Dispersions ; Electronics ; Exact sciences and technology ; Gallium compounds ; Light ; Microwave and submillimeter wave devices, electron transfer devices ; microwave power FETs ; Modulation ; Other multijunction devices. Power transistors. Thyristors ; Power FETs ; Semiconductor device modeling ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Simulation ; Surface chemistry ; Surfaces ; Transient response ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.594-602</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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I-DLTS experiments under dark reveals three surface-trap levels with activation energies 0.44 eV (h1), 0.59 eV (h2), and 0.85 eV (h3), as well as a bulk trap with activation energy 0.45 eV (e1). While the I-DLTS signal peaks associated with the two shallower surface traps h1 and h2 are suppressed by optical illumination with energy larger than the AlGaAs bandgap, that which is associated with the deepest surface trap h3 is nearly unaffected by light up to the highest intensity adopted. Two-dimensional device simulations assuming that surface traps behave as hole traps provide an interpretation for the observed different light sensitivity of surface traps, explaining it as the result of the temperature dependence of surface hole concentration and negative trap-charge density, making trap-charge modulation at increasing temperature less and less sensitive to excess carriers generated by light.</description><subject>Activation energy</subject><subject>Aluminum compounds</subject><subject>Aluminum gallium arsenides</subject><subject>Applied sciences</subject><subject>Charge carrier density</subject><subject>Charge carrier lifetime</subject><subject>Density</subject><subject>Devices</subject><subject>Dispersions</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium compounds</subject><subject>Light</subject><subject>Microwave and submillimeter wave devices, electron transfer devices</subject><subject>microwave power FETs</subject><subject>Modulation</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Power FETs</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Simulation</subject><subject>Surface chemistry</subject><subject>Surfaces</subject><subject>Transient response</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkc-PEyEUx4nRxLp69uCFmKgnujAwFI5Nuz9MmphoPRMGGMtmyszyqEn_e5l0k0086OXxHny-7wFfhN4zumSM6uv9zXbZUNoulWiZ0C_QgrXtimgp5Eu0oJQpornir9EbgIdaSiGaBXrcxV-HgiEkiCX-juWMxx67U84hFbzd7X9gmzyOBXA8TkN0tsQxAR4TLoeAp8MZooNZs92QMpLvt8RHmEKGiuGY8Hq4s2sgc8D3tzd7eIte9XaA8O5pvUI_6_bmnuy-3X3drHfEcc0L6fqe9x3jXjjnOadaa6WY553vrLC6U30bWEe15TQEq33XeK5Y7xovvao5v0JfLn2nPD6eAhRzjODCMNgUxhMYpWVDtWjbSn7-J9nopv5pq_4PKspEs9IV_PgX-DCecqrPNUquhGqVmsdeXyCXR4AcejPleLT5bBg1s6WmWmpmS83F0qr49NTWgrNDn21yEZ5lUjIq2HzPDxcuhhCejwVVTHL-B9xNqMI</recordid><startdate>200504</startdate><enddate>200504</enddate><creator>Verzellesi, G.</creator><creator>Basile, A.F.</creator><creator>Cavallini, A.</creator><creator>Castaldini, A.</creator><creator>Chini, A.</creator><creator>Canali, C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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I-DLTS experiments under dark reveals three surface-trap levels with activation energies 0.44 eV (h1), 0.59 eV (h2), and 0.85 eV (h3), as well as a bulk trap with activation energy 0.45 eV (e1). While the I-DLTS signal peaks associated with the two shallower surface traps h1 and h2 are suppressed by optical illumination with energy larger than the AlGaAs bandgap, that which is associated with the deepest surface trap h3 is nearly unaffected by light up to the highest intensity adopted. Two-dimensional device simulations assuming that surface traps behave as hole traps provide an interpretation for the observed different light sensitivity of surface traps, explaining it as the result of the temperature dependence of surface hole concentration and negative trap-charge density, making trap-charge modulation at increasing temperature less and less sensitive to excess carriers generated by light.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2005.845149</doi><tpages>9</tpages></addata></record> |
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| subjects | Activation energy Aluminum compounds Aluminum gallium arsenides Applied sciences Charge carrier density Charge carrier lifetime Density Devices Dispersions Electronics Exact sciences and technology Gallium compounds Light Microwave and submillimeter wave devices, electron transfer devices microwave power FETs Modulation Other multijunction devices. Power transistors. Thyristors Power FETs Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simulation Surface chemistry Surfaces Transient response Transistors |
| title | Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs |
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