A semistate description for hysteresis in MOS neural-type cells
Semistate theory is used to give a new means of viewing the hysteresis developed in an MOS neural-type cell. The current which feeds an RC load is represented in terms of single valued functions within the semistate equations with some node voltages considered as parameters. When these parameters ar...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 292 vol.1 |
---|---|
container_issue | |
container_start_page | 289 |
container_title | |
container_volume | |
creator | Wolodkin, G. El-Leithy, N. de Savigny, M. Tsay, S.W. Newcomb, R. |
description | Semistate theory is used to give a new means of viewing the hysteresis developed in an MOS neural-type cell. The current which feeds an RC load is represented in terms of single valued functions within the semistate equations with some node voltages considered as parameters. When these parameters are eliminated, via equations or SPICE simulations, hysteresis is found to be present for certain element value and input voltage choices.< > |
doi_str_mv | 10.1109/MWSCAS.1990.140709 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_140709</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>140709</ieee_id><sourcerecordid>140709</sourcerecordid><originalsourceid>FETCH-LOGICAL-i172t-13886f7e20039b75f8150a1b29efc3fb082cfbfe1ac5bc77dd38c61a27284e163</originalsourceid><addsrcrecordid>eNotj01qwzAUhAWl0DbNBbLSBZw-SbYlrYox_QkkZOGWLoMkP1EVxzGSuvDta0hnMzAfDDOEbBhsGQP9dPjq2qbbMq2XoAQJ-oY8gFQgABSr7sg6pR9YVFYLFPfkuaEJzyFlk5H2mFwMUw6XkfpLpN9zyhgxhUTDSA_Hjo74G81Q5HlC6nAY0iO59WZIuP73Ffl8fflo34v98W3XNvsiMMlzwYRStZfIAYS2svLLGDDMco3eCW9BceetR2ZcZZ2UfS-Uq5nhkqsSWS1WZHPtDYh4mmI4mzifrhfFH6HWR38</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A semistate description for hysteresis in MOS neural-type cells</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Wolodkin, G. ; El-Leithy, N. ; de Savigny, M. ; Tsay, S.W. ; Newcomb, R.</creator><creatorcontrib>Wolodkin, G. ; El-Leithy, N. ; de Savigny, M. ; Tsay, S.W. ; Newcomb, R.</creatorcontrib><description>Semistate theory is used to give a new means of viewing the hysteresis developed in an MOS neural-type cell. The current which feeds an RC load is represented in terms of single valued functions within the semistate equations with some node voltages considered as parameters. When these parameters are eliminated, via equations or SPICE simulations, hysteresis is found to be present for certain element value and input voltage choices.< ></description><identifier>ISBN: 0780300815</identifier><identifier>ISBN: 9780780300811</identifier><identifier>DOI: 10.1109/MWSCAS.1990.140709</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuits ; Educational institutions ; Feeds ; Hysteresis ; Intelligent networks ; Laboratories ; Neural networks ; Nonlinear equations ; SPICE ; Voltage</subject><ispartof>Proceedings of the 33rd Midwest Symposium on Circuits and Systems, 1990, p.289-292 vol.1</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/140709$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/140709$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wolodkin, G.</creatorcontrib><creatorcontrib>El-Leithy, N.</creatorcontrib><creatorcontrib>de Savigny, M.</creatorcontrib><creatorcontrib>Tsay, S.W.</creatorcontrib><creatorcontrib>Newcomb, R.</creatorcontrib><title>A semistate description for hysteresis in MOS neural-type cells</title><title>Proceedings of the 33rd Midwest Symposium on Circuits and Systems</title><addtitle>MWSCAS</addtitle><description>Semistate theory is used to give a new means of viewing the hysteresis developed in an MOS neural-type cell. The current which feeds an RC load is represented in terms of single valued functions within the semistate equations with some node voltages considered as parameters. When these parameters are eliminated, via equations or SPICE simulations, hysteresis is found to be present for certain element value and input voltage choices.< ></description><subject>Circuits</subject><subject>Educational institutions</subject><subject>Feeds</subject><subject>Hysteresis</subject><subject>Intelligent networks</subject><subject>Laboratories</subject><subject>Neural networks</subject><subject>Nonlinear equations</subject><subject>SPICE</subject><subject>Voltage</subject><isbn>0780300815</isbn><isbn>9780780300811</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1990</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj01qwzAUhAWl0DbNBbLSBZw-SbYlrYox_QkkZOGWLoMkP1EVxzGSuvDta0hnMzAfDDOEbBhsGQP9dPjq2qbbMq2XoAQJ-oY8gFQgABSr7sg6pR9YVFYLFPfkuaEJzyFlk5H2mFwMUw6XkfpLpN9zyhgxhUTDSA_Hjo74G81Q5HlC6nAY0iO59WZIuP73Ffl8fflo34v98W3XNvsiMMlzwYRStZfIAYS2svLLGDDMco3eCW9BceetR2ZcZZ2UfS-Uq5nhkqsSWS1WZHPtDYh4mmI4mzifrhfFH6HWR38</recordid><startdate>1990</startdate><enddate>1990</enddate><creator>Wolodkin, G.</creator><creator>El-Leithy, N.</creator><creator>de Savigny, M.</creator><creator>Tsay, S.W.</creator><creator>Newcomb, R.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1990</creationdate><title>A semistate description for hysteresis in MOS neural-type cells</title><author>Wolodkin, G. ; El-Leithy, N. ; de Savigny, M. ; Tsay, S.W. ; Newcomb, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-13886f7e20039b75f8150a1b29efc3fb082cfbfe1ac5bc77dd38c61a27284e163</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Circuits</topic><topic>Educational institutions</topic><topic>Feeds</topic><topic>Hysteresis</topic><topic>Intelligent networks</topic><topic>Laboratories</topic><topic>Neural networks</topic><topic>Nonlinear equations</topic><topic>SPICE</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Wolodkin, G.</creatorcontrib><creatorcontrib>El-Leithy, N.</creatorcontrib><creatorcontrib>de Savigny, M.</creatorcontrib><creatorcontrib>Tsay, S.W.</creatorcontrib><creatorcontrib>Newcomb, R.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wolodkin, G.</au><au>El-Leithy, N.</au><au>de Savigny, M.</au><au>Tsay, S.W.</au><au>Newcomb, R.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A semistate description for hysteresis in MOS neural-type cells</atitle><btitle>Proceedings of the 33rd Midwest Symposium on Circuits and Systems</btitle><stitle>MWSCAS</stitle><date>1990</date><risdate>1990</risdate><spage>289</spage><epage>292 vol.1</epage><pages>289-292 vol.1</pages><isbn>0780300815</isbn><isbn>9780780300811</isbn><abstract>Semistate theory is used to give a new means of viewing the hysteresis developed in an MOS neural-type cell. The current which feeds an RC load is represented in terms of single valued functions within the semistate equations with some node voltages considered as parameters. When these parameters are eliminated, via equations or SPICE simulations, hysteresis is found to be present for certain element value and input voltage choices.< ></abstract><pub>IEEE</pub><doi>10.1109/MWSCAS.1990.140709</doi></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISBN: 0780300815 |
ispartof | Proceedings of the 33rd Midwest Symposium on Circuits and Systems, 1990, p.289-292 vol.1 |
issn | |
language | eng |
recordid | cdi_ieee_primary_140709 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Circuits Educational institutions Feeds Hysteresis Intelligent networks Laboratories Neural networks Nonlinear equations SPICE Voltage |
title | A semistate description for hysteresis in MOS neural-type cells |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T07%3A00%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20semistate%20description%20for%20hysteresis%20in%20MOS%20neural-type%20cells&rft.btitle=Proceedings%20of%20the%2033rd%20Midwest%20Symposium%20on%20Circuits%20and%20Systems&rft.au=Wolodkin,%20G.&rft.date=1990&rft.spage=289&rft.epage=292%20vol.1&rft.pages=289-292%20vol.1&rft.isbn=0780300815&rft.isbn_list=9780780300811&rft_id=info:doi/10.1109/MWSCAS.1990.140709&rft_dat=%3Cieee_6IE%3E140709%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=140709&rfr_iscdi=true |