Liquid nitrogen CMOS for computer applications

Past and present development in the field of operating microelectronic computer circuits at liquid nitrogen temperature (LNT) are reviewed. To assess the potential of this technology, its advantages and disadvantages are discussed. The fact that devices and materials behave generically better at low...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Gaensslen, F.H., Meyer, D.D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 8
container_issue
container_start_page 4
container_title
container_volume
creator Gaensslen, F.H.
Meyer, D.D.
description Past and present development in the field of operating microelectronic computer circuits at liquid nitrogen temperature (LNT) are reviewed. To assess the potential of this technology, its advantages and disadvantages are discussed. The fact that devices and materials behave generically better at low temperature will have some bearing on the ultimate attainable technology limits. The optimized complementary metal oxide semiconductor (CMOS) system advantages at LNT are analyzed. The basic conclusion is that the liquid nitrogen CMOS (LNCMOS) is a viable system technology for commercial and military computer systems.< >
doi_str_mv 10.1109/ICCD.1991.139827
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_139827</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>139827</ieee_id><sourcerecordid>139827</sourcerecordid><originalsourceid>FETCH-LOGICAL-i172t-7a608dc39a6daa653de5c7c2b3a176f6b34155fb0a1150e992b08270ff6726203</originalsourceid><addsrcrecordid>eNotjztPwzAURi0hJKB0R0z-Awn32vVrROZVKagDMFc3jo2M2iQ46cC_p1L7LWc7Oh9jdwg1IriHtfdPNTqHNUpnhblgN2DRaiEMuCu2nKYfOE4pC2Z1zeom_x5yx_s8l-E79ty_bz54GgoPw348zLFwGsddDjTnoZ9u2WWi3RSXZy7Y18vzp3-rms3r2j82VUYj5sqQBtsF6Uh3RFrJLqpggmglodFJt3KFSqUWCFFBdE60cGyFlLQRWoBcsPuTN8cYt2PJeyp_29Mj-Q-TuD_7</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Liquid nitrogen CMOS for computer applications</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Gaensslen, F.H. ; Meyer, D.D.</creator><creatorcontrib>Gaensslen, F.H. ; Meyer, D.D.</creatorcontrib><description>Past and present development in the field of operating microelectronic computer circuits at liquid nitrogen temperature (LNT) are reviewed. To assess the potential of this technology, its advantages and disadvantages are discussed. The fact that devices and materials behave generically better at low temperature will have some bearing on the ultimate attainable technology limits. The optimized complementary metal oxide semiconductor (CMOS) system advantages at LNT are analyzed. The basic conclusion is that the liquid nitrogen CMOS (LNCMOS) is a viable system technology for commercial and military computer systems.&lt; &gt;</description><identifier>ISBN: 0818622709</identifier><identifier>ISBN: 9780818622700</identifier><identifier>DOI: 10.1109/ICCD.1991.139827</identifier><language>eng</language><publisher>IEEE Comput. Soc. Press</publisher><subject>Circuits ; CMOS technology ; Computer applications ; Large-scale systems ; Microelectronics ; MOS devices ; Nitrogen ; Semiconductor device packaging ; Temperature ; Thermal conductivity</subject><ispartof>[1991 Proceedings] IEEE International Conference on Computer Design: VLSI in Computers and Processors, 1991, p.4-8</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/139827$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/139827$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gaensslen, F.H.</creatorcontrib><creatorcontrib>Meyer, D.D.</creatorcontrib><title>Liquid nitrogen CMOS for computer applications</title><title>[1991 Proceedings] IEEE International Conference on Computer Design: VLSI in Computers and Processors</title><addtitle>ICCD</addtitle><description>Past and present development in the field of operating microelectronic computer circuits at liquid nitrogen temperature (LNT) are reviewed. To assess the potential of this technology, its advantages and disadvantages are discussed. The fact that devices and materials behave generically better at low temperature will have some bearing on the ultimate attainable technology limits. The optimized complementary metal oxide semiconductor (CMOS) system advantages at LNT are analyzed. The basic conclusion is that the liquid nitrogen CMOS (LNCMOS) is a viable system technology for commercial and military computer systems.&lt; &gt;</description><subject>Circuits</subject><subject>CMOS technology</subject><subject>Computer applications</subject><subject>Large-scale systems</subject><subject>Microelectronics</subject><subject>MOS devices</subject><subject>Nitrogen</subject><subject>Semiconductor device packaging</subject><subject>Temperature</subject><subject>Thermal conductivity</subject><isbn>0818622709</isbn><isbn>9780818622700</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1991</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjztPwzAURi0hJKB0R0z-Awn32vVrROZVKagDMFc3jo2M2iQ46cC_p1L7LWc7Oh9jdwg1IriHtfdPNTqHNUpnhblgN2DRaiEMuCu2nKYfOE4pC2Z1zeom_x5yx_s8l-E79ty_bz54GgoPw348zLFwGsddDjTnoZ9u2WWi3RSXZy7Y18vzp3-rms3r2j82VUYj5sqQBtsF6Uh3RFrJLqpggmglodFJt3KFSqUWCFFBdE60cGyFlLQRWoBcsPuTN8cYt2PJeyp_29Mj-Q-TuD_7</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>Gaensslen, F.H.</creator><creator>Meyer, D.D.</creator><general>IEEE Comput. Soc. Press</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1991</creationdate><title>Liquid nitrogen CMOS for computer applications</title><author>Gaensslen, F.H. ; Meyer, D.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-7a608dc39a6daa653de5c7c2b3a176f6b34155fb0a1150e992b08270ff6726203</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Circuits</topic><topic>CMOS technology</topic><topic>Computer applications</topic><topic>Large-scale systems</topic><topic>Microelectronics</topic><topic>MOS devices</topic><topic>Nitrogen</topic><topic>Semiconductor device packaging</topic><topic>Temperature</topic><topic>Thermal conductivity</topic><toplevel>online_resources</toplevel><creatorcontrib>Gaensslen, F.H.</creatorcontrib><creatorcontrib>Meyer, D.D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gaensslen, F.H.</au><au>Meyer, D.D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Liquid nitrogen CMOS for computer applications</atitle><btitle>[1991 Proceedings] IEEE International Conference on Computer Design: VLSI in Computers and Processors</btitle><stitle>ICCD</stitle><date>1991</date><risdate>1991</risdate><spage>4</spage><epage>8</epage><pages>4-8</pages><isbn>0818622709</isbn><isbn>9780818622700</isbn><abstract>Past and present development in the field of operating microelectronic computer circuits at liquid nitrogen temperature (LNT) are reviewed. To assess the potential of this technology, its advantages and disadvantages are discussed. The fact that devices and materials behave generically better at low temperature will have some bearing on the ultimate attainable technology limits. The optimized complementary metal oxide semiconductor (CMOS) system advantages at LNT are analyzed. The basic conclusion is that the liquid nitrogen CMOS (LNCMOS) is a viable system technology for commercial and military computer systems.&lt; &gt;</abstract><pub>IEEE Comput. Soc. Press</pub><doi>10.1109/ICCD.1991.139827</doi><tpages>5</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISBN: 0818622709
ispartof [1991 Proceedings] IEEE International Conference on Computer Design: VLSI in Computers and Processors, 1991, p.4-8
issn
language eng
recordid cdi_ieee_primary_139827
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Circuits
CMOS technology
Computer applications
Large-scale systems
Microelectronics
MOS devices
Nitrogen
Semiconductor device packaging
Temperature
Thermal conductivity
title Liquid nitrogen CMOS for computer applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T11%3A22%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Liquid%20nitrogen%20CMOS%20for%20computer%20applications&rft.btitle=%5B1991%20Proceedings%5D%20IEEE%20International%20Conference%20on%20Computer%20Design:%20VLSI%20in%20Computers%20and%20Processors&rft.au=Gaensslen,%20F.H.&rft.date=1991&rft.spage=4&rft.epage=8&rft.pages=4-8&rft.isbn=0818622709&rft.isbn_list=9780818622700&rft_id=info:doi/10.1109/ICCD.1991.139827&rft_dat=%3Cieee_6IE%3E139827%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=139827&rfr_iscdi=true