A 1-6 GHz monolithic up-conversion mixer with input/output active baluns using SiGe HBT process
In this paper, a 1-6 GHz MMIC up-conversion mixer, for an RF transmitter, is designed and fabricated using 0.8 /spl mu/m SiGe HBT process technology. This mixer is implemented on-chip using LO/RF wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured res...
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| creator | Sang-Heung Lee Hyun-Chul Bae Seung-Yun Lee Jongdae Kim Bo Woo Kim Jin-Yeong Kang |
| description | In this paper, a 1-6 GHz MMIC up-conversion mixer, for an RF transmitter, is designed and fabricated using 0.8 /spl mu/m SiGe HBT process technology. This mixer is implemented on-chip using LO/RF wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated mixer show positive power conversion gain from 1 GHz to 6 GHz, bandwidth of 4.5 GHz, LO isolation (LO to IF isolation and LO to RF isolation) between 27 dB and 45 dB, OIP3 between -2 dBm and -12 dBm, current consumption of 29 mA for 3.0 V supply voltage. The chip size of the fabricated mixer is 2.7 mm/spl times/1.6 mm. |
| doi_str_mv | 10.1109/SMIC.2004.1398156 |
| format | Conference Proceeding |
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This mixer is implemented on-chip using LO/RF wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated mixer show positive power conversion gain from 1 GHz to 6 GHz, bandwidth of 4.5 GHz, LO isolation (LO to IF isolation and LO to RF isolation) between 27 dB and 45 dB, OIP3 between -2 dBm and -12 dBm, current consumption of 29 mA for 3.0 V supply voltage. The chip size of the fabricated mixer is 2.7 mm/spl times/1.6 mm.</description><identifier>ISBN: 9780780387034</identifier><identifier>ISBN: 0780387031</identifier><identifier>DOI: 10.1109/SMIC.2004.1398156</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuits ; Germanium silicon alloys ; Heterojunction bipolar transistors ; Impedance matching ; Isolation technology ; MMICs ; Radio frequency ; Silicon germanium ; Transmitters ; Wideband</subject><ispartof>Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004, 2004, p.17-20</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1398156$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4048,4049,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1398156$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Sang-Heung Lee</creatorcontrib><creatorcontrib>Hyun-Chul Bae</creatorcontrib><creatorcontrib>Seung-Yun Lee</creatorcontrib><creatorcontrib>Jongdae Kim</creatorcontrib><creatorcontrib>Bo Woo Kim</creatorcontrib><creatorcontrib>Jin-Yeong Kang</creatorcontrib><title>A 1-6 GHz monolithic up-conversion mixer with input/output active baluns using SiGe HBT process</title><title>Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004</title><addtitle>SMIC</addtitle><description>In this paper, a 1-6 GHz MMIC up-conversion mixer, for an RF transmitter, is designed and fabricated using 0.8 /spl mu/m SiGe HBT process technology. This mixer is implemented on-chip using LO/RF wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated mixer show positive power conversion gain from 1 GHz to 6 GHz, bandwidth of 4.5 GHz, LO isolation (LO to IF isolation and LO to RF isolation) between 27 dB and 45 dB, OIP3 between -2 dBm and -12 dBm, current consumption of 29 mA for 3.0 V supply voltage. The chip size of the fabricated mixer is 2.7 mm/spl times/1.6 mm.</description><subject>Circuits</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Impedance matching</subject><subject>Isolation technology</subject><subject>MMICs</subject><subject>Radio frequency</subject><subject>Silicon germanium</subject><subject>Transmitters</subject><subject>Wideband</subject><isbn>9780780387034</isbn><isbn>0780387031</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkN1qg0AUhBdKoSX1AUpvzgtoznqi616m0ppASi-SXsu6HtstiYqr6c_TV2iGge9iYBhGiHuJkZSol_uXbR7FiKtIks5kkl6JQKsMZ1OmkFY3IvD-E2eRTpNM3opyDTJModj8wqlru6MbP5yFqQ9t15558K5r4eS-eYCvOQLX9tO47KZxBhg7ujNDZY5T62Hyrn2HvSsYNo8H6IfOsvd34roxR8_BhQvx9vx0yDfh7rXY5utd6KRKxtCojKgyyIQyVZkmjq1WOI80MdfaclUTck26sbZha4yMJUuMkVTaVCqlhXj473XMXPaDO5nhp7zcQH_adVMe</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Sang-Heung Lee</creator><creator>Hyun-Chul Bae</creator><creator>Seung-Yun Lee</creator><creator>Jongdae Kim</creator><creator>Bo Woo Kim</creator><creator>Jin-Yeong Kang</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2004</creationdate><title>A 1-6 GHz monolithic up-conversion mixer with input/output active baluns using SiGe HBT process</title><author>Sang-Heung Lee ; Hyun-Chul Bae ; Seung-Yun Lee ; Jongdae Kim ; Bo Woo Kim ; Jin-Yeong Kang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-a7833ba0e30167893e2c970965a2ed9cebd30ed39fccfecaa121e1020376fb763</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Circuits</topic><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>Impedance matching</topic><topic>Isolation technology</topic><topic>MMICs</topic><topic>Radio frequency</topic><topic>Silicon germanium</topic><topic>Transmitters</topic><topic>Wideband</topic><toplevel>online_resources</toplevel><creatorcontrib>Sang-Heung Lee</creatorcontrib><creatorcontrib>Hyun-Chul Bae</creatorcontrib><creatorcontrib>Seung-Yun Lee</creatorcontrib><creatorcontrib>Jongdae Kim</creatorcontrib><creatorcontrib>Bo Woo Kim</creatorcontrib><creatorcontrib>Jin-Yeong Kang</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sang-Heung Lee</au><au>Hyun-Chul Bae</au><au>Seung-Yun Lee</au><au>Jongdae Kim</au><au>Bo Woo Kim</au><au>Jin-Yeong Kang</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A 1-6 GHz monolithic up-conversion mixer with input/output active baluns using SiGe HBT process</atitle><btitle>Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004</btitle><stitle>SMIC</stitle><date>2004</date><risdate>2004</risdate><spage>17</spage><epage>20</epage><pages>17-20</pages><isbn>9780780387034</isbn><isbn>0780387031</isbn><abstract>In this paper, a 1-6 GHz MMIC up-conversion mixer, for an RF transmitter, is designed and fabricated using 0.8 /spl mu/m SiGe HBT process technology. This mixer is implemented on-chip using LO/RF wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated mixer show positive power conversion gain from 1 GHz to 6 GHz, bandwidth of 4.5 GHz, LO isolation (LO to IF isolation and LO to RF isolation) between 27 dB and 45 dB, OIP3 between -2 dBm and -12 dBm, current consumption of 29 mA for 3.0 V supply voltage. The chip size of the fabricated mixer is 2.7 mm/spl times/1.6 mm.</abstract><pub>IEEE</pub><doi>10.1109/SMIC.2004.1398156</doi><tpages>4</tpages></addata></record> |
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| identifier | ISBN: 9780780387034 |
| ispartof | Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004, 2004, p.17-20 |
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| language | eng |
| recordid | cdi_ieee_primary_1398156 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuits Germanium silicon alloys Heterojunction bipolar transistors Impedance matching Isolation technology MMICs Radio frequency Silicon germanium Transmitters Wideband |
| title | A 1-6 GHz monolithic up-conversion mixer with input/output active baluns using SiGe HBT process |
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