Operation of 1550-nm electroabsorption-Modulated laser at 40/spl deg/C for 10-gb/s, 40-km transmission
Semicooled operation at 40/spl deg/C of electroabsorptive modulator integrated laser (EML) for intermediate reach communication has been demonstrated. Reproducible operation at the elevated temperature was achieved through a device parameter optimized based on the temperature dependence of the dc ch...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2005-01, Vol.11 (1), p.135-140 |
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| container_title | IEEE journal of selected topics in quantum electronics |
| container_volume | 11 |
| creator | Yu-Dong Bae Byung-Kwon Kang Byeonghoon Park Sang-Moon Lee Young Hyun Kim Hong-Kwon Kim Mun-Kue Park In Kim Jang, D.-H. |
| description | Semicooled operation at 40/spl deg/C of electroabsorptive modulator integrated laser (EML) for intermediate reach communication has been demonstrated. Reproducible operation at the elevated temperature was achieved through a device parameter optimized based on the temperature dependence of the dc characteristics of EML and a design of multi-quantum-well structure providing both relevant output power and high-frequency bandwidth at 40/spl deg/C. Good eye pattern and near zero chirp with the average power over 0 dBm are obtained at 40/spl deg/C, with an estimated lifetime over 20 years. |
| doi_str_mv | 10.1109/JSTQE.2004.841711 |
| format | Article |
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Reproducible operation at the elevated temperature was achieved through a device parameter optimized based on the temperature dependence of the dc characteristics of EML and a design of multi-quantum-well structure providing both relevant output power and high-frequency bandwidth at 40/spl deg/C. Good eye pattern and near zero chirp with the average power over 0 dBm are obtained at 40/spl deg/C, with an estimated lifetime over 20 years.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2004.841711</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>IEEE</publisher><subject>Chirp ; Design optimization ; Distributed feedback devices ; Electroabsorptive modulator integrated lasers (EML) ; Energy consumption ; integrated optoelectronics ; Laser feedback ; Power generation ; Power lasers ; Semiconductor device measurement ; Temperature dependence ; Transmission line measurements</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2005-01, Vol.11 (1), p.135-140</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1109-1099c458371b4ecf46f1e2c7f0e26caf8a284efd864538fa2148ee9ac2aabd7a3</citedby><cites>FETCH-LOGICAL-c1109-1099c458371b4ecf46f1e2c7f0e26caf8a284efd864538fa2148ee9ac2aabd7a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1395899$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1395899$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yu-Dong Bae</creatorcontrib><creatorcontrib>Byung-Kwon Kang</creatorcontrib><creatorcontrib>Byeonghoon Park</creatorcontrib><creatorcontrib>Sang-Moon Lee</creatorcontrib><creatorcontrib>Young Hyun Kim</creatorcontrib><creatorcontrib>Hong-Kwon Kim</creatorcontrib><creatorcontrib>Mun-Kue Park</creatorcontrib><creatorcontrib>In Kim</creatorcontrib><creatorcontrib>Jang, D.-H.</creatorcontrib><title>Operation of 1550-nm electroabsorption-Modulated laser at 40/spl deg/C for 10-gb/s, 40-km transmission</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>Semicooled operation at 40/spl deg/C of electroabsorptive modulator integrated laser (EML) for intermediate reach communication has been demonstrated. Reproducible operation at the elevated temperature was achieved through a device parameter optimized based on the temperature dependence of the dc characteristics of EML and a design of multi-quantum-well structure providing both relevant output power and high-frequency bandwidth at 40/spl deg/C. Good eye pattern and near zero chirp with the average power over 0 dBm are obtained at 40/spl deg/C, with an estimated lifetime over 20 years.</description><subject>Chirp</subject><subject>Design optimization</subject><subject>Distributed feedback devices</subject><subject>Electroabsorptive modulator integrated lasers (EML)</subject><subject>Energy consumption</subject><subject>integrated optoelectronics</subject><subject>Laser feedback</subject><subject>Power generation</subject><subject>Power lasers</subject><subject>Semiconductor device measurement</subject><subject>Temperature dependence</subject><subject>Transmission line measurements</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpFkMFKw0AQhhdRsFYfQLzsA7jN7GaTbI5SalUqRazgLUw2syWaNGE3Hnx7Eyt4GGbgn29-5mfsWsJCSsijp9fdy2qhAPTCaJlJecJmMkmM0IlWp-MMWSZUCu_n7CKEDwAw2sCMuW1PHoe6O_DO8ZEAcWg5NWQH32EZOt9Ponjuqq8GB6p4g4E8x4FriELf8Ir20ZK7znMJYl9G4XZUxGfLB4-H0NYhjPwlO3PYBLr663P2dr_aLR_EZrt-XN5thJ2-EGPlVicmzmSpyTqdOknKZg5IpRadQWU0ucqkOomNQyW1IcrRKsSyyjCeM3m8a30XgidX9L5u0X8XEorJovgNqpiCKo5BjczNkamJ6H8_zhOT5_EP-uNj_w</recordid><startdate>200501</startdate><enddate>200501</enddate><creator>Yu-Dong Bae</creator><creator>Byung-Kwon Kang</creator><creator>Byeonghoon Park</creator><creator>Sang-Moon Lee</creator><creator>Young Hyun Kim</creator><creator>Hong-Kwon Kim</creator><creator>Mun-Kue Park</creator><creator>In Kim</creator><creator>Jang, D.-H.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200501</creationdate><title>Operation of 1550-nm electroabsorption-Modulated laser at 40/spl deg/C for 10-gb/s, 40-km transmission</title><author>Yu-Dong Bae ; Byung-Kwon Kang ; Byeonghoon Park ; Sang-Moon Lee ; Young Hyun Kim ; Hong-Kwon Kim ; Mun-Kue Park ; In Kim ; Jang, D.-H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1109-1099c458371b4ecf46f1e2c7f0e26caf8a284efd864538fa2148ee9ac2aabd7a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Chirp</topic><topic>Design optimization</topic><topic>Distributed feedback devices</topic><topic>Electroabsorptive modulator integrated lasers (EML)</topic><topic>Energy consumption</topic><topic>integrated optoelectronics</topic><topic>Laser feedback</topic><topic>Power generation</topic><topic>Power lasers</topic><topic>Semiconductor device measurement</topic><topic>Temperature dependence</topic><topic>Transmission line measurements</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yu-Dong Bae</creatorcontrib><creatorcontrib>Byung-Kwon Kang</creatorcontrib><creatorcontrib>Byeonghoon Park</creatorcontrib><creatorcontrib>Sang-Moon Lee</creatorcontrib><creatorcontrib>Young Hyun Kim</creatorcontrib><creatorcontrib>Hong-Kwon Kim</creatorcontrib><creatorcontrib>Mun-Kue Park</creatorcontrib><creatorcontrib>In Kim</creatorcontrib><creatorcontrib>Jang, D.-H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE journal of selected topics in quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yu-Dong Bae</au><au>Byung-Kwon Kang</au><au>Byeonghoon Park</au><au>Sang-Moon Lee</au><au>Young Hyun Kim</au><au>Hong-Kwon Kim</au><au>Mun-Kue Park</au><au>In Kim</au><au>Jang, D.-H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Operation of 1550-nm electroabsorption-Modulated laser at 40/spl deg/C for 10-gb/s, 40-km transmission</atitle><jtitle>IEEE journal of selected topics in quantum electronics</jtitle><stitle>JSTQE</stitle><date>2005-01</date><risdate>2005</risdate><volume>11</volume><issue>1</issue><spage>135</spage><epage>140</epage><pages>135-140</pages><issn>1077-260X</issn><eissn>1558-4542</eissn><coden>IJSQEN</coden><abstract>Semicooled operation at 40/spl deg/C of electroabsorptive modulator integrated laser (EML) for intermediate reach communication has been demonstrated. Reproducible operation at the elevated temperature was achieved through a device parameter optimized based on the temperature dependence of the dc characteristics of EML and a design of multi-quantum-well structure providing both relevant output power and high-frequency bandwidth at 40/spl deg/C. Good eye pattern and near zero chirp with the average power over 0 dBm are obtained at 40/spl deg/C, with an estimated lifetime over 20 years.</abstract><pub>IEEE</pub><doi>10.1109/JSTQE.2004.841711</doi><tpages>6</tpages></addata></record> |
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| ispartof | IEEE journal of selected topics in quantum electronics, 2005-01, Vol.11 (1), p.135-140 |
| issn | 1077-260X 1558-4542 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Chirp Design optimization Distributed feedback devices Electroabsorptive modulator integrated lasers (EML) Energy consumption integrated optoelectronics Laser feedback Power generation Power lasers Semiconductor device measurement Temperature dependence Transmission line measurements |
| title | Operation of 1550-nm electroabsorption-Modulated laser at 40/spl deg/C for 10-gb/s, 40-km transmission |
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