Controlled growth of ordered SWCNTs for the realization of multielectrode field emitter devices
The growth of single wall carbon nanotubes (SWCNTs) on selected patterned substrates is the fundamental step for the realization of many devices based on SWCNTs. In this work, we show that the growth technique based on chemical vapor deposition (CVD) is perfectly suitable for the realization of prot...
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| creator | Brunetti, F. Regoliosi, P. Reale, A. Di Carlo, A. Terranova, M.L. Orlanducci, S. Fiori, A. Tamburri, E. Sessa, V. Ciorba, A. Rossi, M. Cirillo, M. Merlo, V. |
| description | The growth of single wall carbon nanotubes (SWCNTs) on selected patterned substrates is the fundamental step for the realization of many devices based on SWCNTs. In this work, we show that the growth technique based on chemical vapor deposition (CVD) is perfectly suitable for the realization of prototypal devices such as efficient field emitters. Many different characterization techniques are used to check the SWCNT growth. Scanning electron microscopy (SEM) and Raman spectroscopy are extensively used to monitor the structural properties of our samples. We characterize the field emission in our systems, and investigate the realization of lithographically patterned multilayer structures for the realization of a multielectrode device able to control the intensity of field emission. |
| doi_str_mv | 10.1109/NANO.2004.1392410 |
| format | Conference Proceeding |
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In this work, we show that the growth technique based on chemical vapor deposition (CVD) is perfectly suitable for the realization of prototypal devices such as efficient field emitters. Many different characterization techniques are used to check the SWCNT growth. Scanning electron microscopy (SEM) and Raman spectroscopy are extensively used to monitor the structural properties of our samples. We characterize the field emission in our systems, and investigate the realization of lithographically patterned multilayer structures for the realization of a multielectrode device able to control the intensity of field emission.</description><identifier>ISBN: 0780385365</identifier><identifier>ISBN: 9780780385368</identifier><identifier>DOI: 10.1109/NANO.2004.1392410</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Anodes ; Applied sciences ; Carbon nanotubes ; Chemical vapor deposition ; Electron emission ; Electronics ; Exact sciences and technology ; Hydrogen ; Microelectronic fabrication (materials and surfaces technology) ; Raman scattering ; Scanning electron microscopy ; Semiconductor electronics. Microelectronics. Optoelectronics. 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We characterize the field emission in our systems, and investigate the realization of lithographically patterned multilayer structures for the realization of a multielectrode device able to control the intensity of field emission.</description><subject>Anodes</subject><subject>Applied sciences</subject><subject>Carbon nanotubes</subject><subject>Chemical vapor deposition</subject><subject>Electron emission</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Hydrogen</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Raman scattering</subject><subject>Scanning electron microscopy</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| identifier | ISBN: 0780385365 |
| ispartof | 2004 4th IEEE Conference on Nanotechnology : Munich, Germany, 16-19 August, 2004, 2004, p.534-536 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Anodes Applied sciences Carbon nanotubes Chemical vapor deposition Electron emission Electronics Exact sciences and technology Hydrogen Microelectronic fabrication (materials and surfaces technology) Raman scattering Scanning electron microscopy Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Spectroscopy Surface morphology Vacuum microelectronics |
| title | Controlled growth of ordered SWCNTs for the realization of multielectrode field emitter devices |
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