Thermal modeling of silicon-on-insulator current mirrors

An analytical approach to thermal modeling of SOI circuits is presented, accounting for heat exchanges among devices and heat loss from the Si film, polylines and interconnects through BOX/FOX to the substrate. The approach was applied to SOI current mirrors to study temperature profiles in devices,...

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Bibliographische Detailangaben
Hauptverfasser:	Yu, F., Cheng, M.-C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analog circuits Analytical models Applied sciences Circuit properties Circuit simulation Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Heat engines Integrated circuit interconnections Mirrors Resistance heating Silicon on insulator technology Temperature Thermal conductivity Thermal resistance
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Beschreibung
Zusammenfassung:	An analytical approach to thermal modeling of SOI circuits is presented, accounting for heat exchanges among devices and heat loss from the Si film, polylines and interconnects through BOX/FOX to the substrate. The approach was applied to SOI current mirrors to study temperature profiles in devices, polylines and interconnects. Electrothermal simulation was also performed, using the developed model and the thermal circuit in BSIMSOI.
DOI:	10.1109/SOI.2004.1391565