Negative luminescence from large-area HgCdTe photodiode arrays with 4.8-6.0-/spl mu/m cutoff wavelengths

We demonstrate the substantial suppression of infrared (IR) blackbody emission from HgCdTe photodiode arrays with cutoff wavelengths of 4.8, 5.5, and 6.0 /spl mu/m. At room temperature, a reverse bias induces internal negative luminescence (NL) efficiencies of 95%, 93%, and 88%, respectively, which...

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Veröffentlicht in:	IEEE journal of quantum electronics 2005-02, Vol.41 (2), p.227-233
Hauptverfasser:	Lindle, J.R., Bewley, W.W., Vurgaftman, I., Chul Soo Kim, Meyer, J.R., Johnson, J.L., Thomas, M.L., Piquette, E.C., Tennant, W.E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Charge carrier processes Cooling Current density Infrared (IR) light-emitting diode Light emitting diodes Luminescence midwave IR photodiode negative luminescence (NL) Photodiodes Semiconductor diodes Temperature
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