Negative luminescence from large-area HgCdTe photodiode arrays with 4.8-6.0-/spl mu/m cutoff wavelengths
We demonstrate the substantial suppression of infrared (IR) blackbody emission from HgCdTe photodiode arrays with cutoff wavelengths of 4.8, 5.5, and 6.0 /spl mu/m. At room temperature, a reverse bias induces internal negative luminescence (NL) efficiencies of 95%, 93%, and 88%, respectively, which...
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Veröffentlicht in: | IEEE journal of quantum electronics 2005-02, Vol.41 (2), p.227-233 |
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Sprache: | eng |
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Zusammenfassung: | We demonstrate the substantial suppression of infrared (IR) blackbody emission from HgCdTe photodiode arrays with cutoff wavelengths of 4.8, 5.5, and 6.0 /spl mu/m. At room temperature, a reverse bias induces internal negative luminescence (NL) efficiencies of 95%, 93%, and 88%, respectively, which correspond to apparent cooling of the surface temperatures by 60, 59, and 49 K. Reverse-bias saturation current densities for the three devices were 0.11, 0.7, and 32 A/cm/sup 2/. Measurement and analysis of the material transmission characteristics indicate that the small residual inefficiencies may be limited by a parasitic absorption process. The 4.8 and 5.5 /spl mu/m photodiodes were fabricated into 18 /spl times/ 2 arrays with total areas of 5 mm /spl times/ 5 mm. In both cases, all 36 array elements were fully operable, and had similar electrical and NL properties. Effective fill factors were /spl ap/100%, since carrier diffusion led to the extraction of carriers from regions between the elements. These results show that efficient, low-power NL devices with active areas in the square-inch range are now feasible for such applications as the cold shielding of infrared focal-plane arrays. |
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ISSN: | 0018-9197 1558-1713 |
DOI: | 10.1109/JQE.2004.839721 |