Photoluminescence from a Nd/sup 3+/-doped AIGaAs semiconductor structure

Photoluminescence from a Nd/sup 3+/-doped AIGaAs semiconductor structure

We report room-temperature photoluminescence from a Nd/sup 3+/ -doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd/sup 3+/ ions.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Ullmann, K., Su, M., Silverman, K.L., Berry, J.J., Harvey, T.E., Mirin, R.P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Laser excitation
Luminescence
Molecular beam epitaxial growth
Neodymium
NIST
Oxidation
Photoluminescence
Quantum computing
Semiconductor materials
Temperature
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report room-temperature photoluminescence from a Nd/sup 3+/ -doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd/sup 3+/ ions.