Analysis of loss and junction temperature in power semiconductors of the matrix converter using simple simulation methods

In this paper, simple simulation methods to calculate power semiconductor loss and instantaneous junction - case temperature difference in a power module of a matrix converter are proposed. The validity of the proposed simulation method for loss calculation is confirmed through experiment using a 22...

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Hauptverfasser:	Odaka, A., Itoh, J., Sato, I., Ohguchi, H., Kodachi, H., Eguchi, N., Umida, H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analytical models Applied sciences Convertors Electrical engineering. Electrical power engineering Electrical machines Electronics Exact sciences and technology Frequency Insulated gate bipolar transistors Matrix converters Multichip modules Other multijunction devices. Power transistors. Thyristors Power electronics, power supplies Pulse width modulation converters Pulse width modulation inverters Rectifiers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Testing Testing. Reliability. Quality control
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