A general post-processing approach to leakage current reduction in SRAM-based FPGAs

A negative effect of ever-shrinking supply and threshold voltages is the larger percentage of total power consumption that comes from leakage current. Several techniques have been developed to help reduce leakage in SRAM-based memory, in which the percent leakage power is especially acute. SRAM-base...

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Bibliographische Detailangaben
Hauptverfasser:	Lach, J., Brandon, J., Skadron, K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Cache memory Circuit properties Circuits CMOS technology Design. Technologies. Operation analysis. Testing Digital circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Energy consumption Exact sciences and technology Field programmable gate arrays Integrated circuits Integrated circuits by function (including memories and processors) Leakage current Logic devices Random access memory Routing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Threshold voltage
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