High power 808 nm diode lasers grown by MOCVD using MO group V sources in N/sub 2/ ambient
The paper presents the recent result of an AlGaAs/GaAs high power diode laser emitting at 808 nm grown by MOCVD using TBAs (tertiary-butyl arsines) as the group V source and N 2 as carrier gas. This is the first report so far for high power AlGaAs/GaAs diode lasers prepared by MOCVD growth using TBA...
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| creator | Tang Xiahong Bo baoxue Zhang Baolin Tjin Swee Chuan |
| description | The paper presents the recent result of an AlGaAs/GaAs high power diode laser emitting at 808 nm grown by MOCVD using TBAs (tertiary-butyl arsines) as the group V source and N 2 as carrier gas. This is the first report so far for high power AlGaAs/GaAs diode lasers prepared by MOCVD growth using TBA group V MO source in 100% nitrogen ambient. Broad area stripe lasers have been prepared with stripe width of 150 μm. Lasing has been successfully achieved from the wafer with a low threshold current density of 267 A/cm 2 with the laser cavity length of 1000 μm. Laser diode devices with different cavity lengths, 1200 μm, 1000 μm and 800 μm, were cleaved to obtain the internal loss, α i , and internal quantum efficiency, η i , of the devices. The α i received was about 9.7 cm -1 and η i of 81% was deduced. |
| doi_str_mv | 10.1109/ICCCAS.2004.1346216 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1346216</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1346216</ieee_id><sourcerecordid>1346216</sourcerecordid><originalsourceid>FETCH-ieee_primary_13462163</originalsourceid><addsrcrecordid>eNp9jr0KwjAUhQMi-PsEXe4L2CZNbdNRoqKDOigOLtLqtUZsWnIt4tur4OxZzsf5lsOYJ7gvBE-DpdZ6svVDziNfyCgORdxiPZ4oLlUcJUmHDYlu_BOZShWNu-ywMMUV6uqJDhRXYEs4m-qMcM8IHUHhqqeF_AWrjd5PoSFjiw9_96aGPVDVuBMSGAvrgJocwgCyMjdoHwPWvmR3wuGv-8ybz3Z6MTKIeKydKTP3Ov5uyv_2DaPvP9Y</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>High power 808 nm diode lasers grown by MOCVD using MO group V sources in N/sub 2/ ambient</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Tang Xiahong ; Bo baoxue ; Zhang Baolin ; Tjin Swee Chuan</creator><creatorcontrib>Tang Xiahong ; Bo baoxue ; Zhang Baolin ; Tjin Swee Chuan</creatorcontrib><description>The paper presents the recent result of an AlGaAs/GaAs high power diode laser emitting at 808 nm grown by MOCVD using TBAs (tertiary-butyl arsines) as the group V source and N 2 as carrier gas. This is the first report so far for high power AlGaAs/GaAs diode lasers prepared by MOCVD growth using TBA group V MO source in 100% nitrogen ambient. Broad area stripe lasers have been prepared with stripe width of 150 μm. Lasing has been successfully achieved from the wafer with a low threshold current density of 267 A/cm 2 with the laser cavity length of 1000 μm. Laser diode devices with different cavity lengths, 1200 μm, 1000 μm and 800 μm, were cleaved to obtain the internal loss, α i , and internal quantum efficiency, η i , of the devices. The α i received was about 9.7 cm -1 and η i of 81% was deduced.</description><identifier>ISBN: 0780386477</identifier><identifier>ISBN: 9780780386471</identifier><identifier>DOI: 10.1109/ICCCAS.2004.1346216</identifier><language>eng</language><publisher>IEEE</publisher><subject>Chemical lasers ; Diode lasers ; Gas lasers ; MOCVD ; Nitrogen ; Optical materials ; Power lasers ; Semiconductor materials ; Solid lasers ; Temperature</subject><ispartof>2004 International Conference on Communications, Circuits and Systems (IEEE Cat. No.04EX914), 2004, Vol.1, p.609-612 Vol.1</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1346216$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1346216$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Tang Xiahong</creatorcontrib><creatorcontrib>Bo baoxue</creatorcontrib><creatorcontrib>Zhang Baolin</creatorcontrib><creatorcontrib>Tjin Swee Chuan</creatorcontrib><title>High power 808 nm diode lasers grown by MOCVD using MO group V sources in N/sub 2/ ambient</title><title>2004 International Conference on Communications, Circuits and Systems (IEEE Cat. No.04EX914)</title><addtitle>ICCCAS</addtitle><description>The paper presents the recent result of an AlGaAs/GaAs high power diode laser emitting at 808 nm grown by MOCVD using TBAs (tertiary-butyl arsines) as the group V source and N 2 as carrier gas. This is the first report so far for high power AlGaAs/GaAs diode lasers prepared by MOCVD growth using TBA group V MO source in 100% nitrogen ambient. Broad area stripe lasers have been prepared with stripe width of 150 μm. Lasing has been successfully achieved from the wafer with a low threshold current density of 267 A/cm 2 with the laser cavity length of 1000 μm. Laser diode devices with different cavity lengths, 1200 μm, 1000 μm and 800 μm, were cleaved to obtain the internal loss, α i , and internal quantum efficiency, η i , of the devices. The α i received was about 9.7 cm -1 and η i of 81% was deduced.</description><subject>Chemical lasers</subject><subject>Diode lasers</subject><subject>Gas lasers</subject><subject>MOCVD</subject><subject>Nitrogen</subject><subject>Optical materials</subject><subject>Power lasers</subject><subject>Semiconductor materials</subject><subject>Solid lasers</subject><subject>Temperature</subject><isbn>0780386477</isbn><isbn>9780780386471</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jr0KwjAUhQMi-PsEXe4L2CZNbdNRoqKDOigOLtLqtUZsWnIt4tur4OxZzsf5lsOYJ7gvBE-DpdZ6svVDziNfyCgORdxiPZ4oLlUcJUmHDYlu_BOZShWNu-ywMMUV6uqJDhRXYEs4m-qMcM8IHUHhqqeF_AWrjd5PoSFjiw9_96aGPVDVuBMSGAvrgJocwgCyMjdoHwPWvmR3wuGv-8ybz3Z6MTKIeKydKTP3Ov5uyv_2DaPvP9Y</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Tang Xiahong</creator><creator>Bo baoxue</creator><creator>Zhang Baolin</creator><creator>Tjin Swee Chuan</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2004</creationdate><title>High power 808 nm diode lasers grown by MOCVD using MO group V sources in N/sub 2/ ambient</title><author>Tang Xiahong ; Bo baoxue ; Zhang Baolin ; Tjin Swee Chuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_13462163</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Chemical lasers</topic><topic>Diode lasers</topic><topic>Gas lasers</topic><topic>MOCVD</topic><topic>Nitrogen</topic><topic>Optical materials</topic><topic>Power lasers</topic><topic>Semiconductor materials</topic><topic>Solid lasers</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Tang Xiahong</creatorcontrib><creatorcontrib>Bo baoxue</creatorcontrib><creatorcontrib>Zhang Baolin</creatorcontrib><creatorcontrib>Tjin Swee Chuan</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tang Xiahong</au><au>Bo baoxue</au><au>Zhang Baolin</au><au>Tjin Swee Chuan</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High power 808 nm diode lasers grown by MOCVD using MO group V sources in N/sub 2/ ambient</atitle><btitle>2004 International Conference on Communications, Circuits and Systems (IEEE Cat. No.04EX914)</btitle><stitle>ICCCAS</stitle><date>2004</date><risdate>2004</risdate><volume>1</volume><spage>609</spage><epage>612 Vol.1</epage><pages>609-612 Vol.1</pages><isbn>0780386477</isbn><isbn>9780780386471</isbn><abstract>The paper presents the recent result of an AlGaAs/GaAs high power diode laser emitting at 808 nm grown by MOCVD using TBAs (tertiary-butyl arsines) as the group V source and N 2 as carrier gas. This is the first report so far for high power AlGaAs/GaAs diode lasers prepared by MOCVD growth using TBA group V MO source in 100% nitrogen ambient. Broad area stripe lasers have been prepared with stripe width of 150 μm. Lasing has been successfully achieved from the wafer with a low threshold current density of 267 A/cm 2 with the laser cavity length of 1000 μm. Laser diode devices with different cavity lengths, 1200 μm, 1000 μm and 800 μm, were cleaved to obtain the internal loss, α i , and internal quantum efficiency, η i , of the devices. The α i received was about 9.7 cm -1 and η i of 81% was deduced.</abstract><pub>IEEE</pub><doi>10.1109/ICCCAS.2004.1346216</doi></addata></record> |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Chemical lasers Diode lasers Gas lasers MOCVD Nitrogen Optical materials Power lasers Semiconductor materials Solid lasers Temperature |
| title | High power 808 nm diode lasers grown by MOCVD using MO group V sources in N/sub 2/ ambient |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T17%3A48%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=High%20power%20808%20nm%20diode%20lasers%20grown%20by%20MOCVD%20using%20MO%20group%20V%20sources%20in%20N/sub%202/%20ambient&rft.btitle=2004%20International%20Conference%20on%20Communications,%20Circuits%20and%20Systems%20(IEEE%20Cat.%20No.04EX914)&rft.au=Tang%20Xiahong&rft.date=2004&rft.volume=1&rft.spage=609&rft.epage=612%20Vol.1&rft.pages=609-612%20Vol.1&rft.isbn=0780386477&rft.isbn_list=9780780386471&rft_id=info:doi/10.1109/ICCCAS.2004.1346216&rft_dat=%3Cieee_6IE%3E1346216%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1346216&rfr_iscdi=true |