Optimized integrated p-i-n-structures for modulation in terahertz range

Using p-i-n-structures in terahertz range faces some problems. Namely, a change of the frequency dependent effective dielectric permittivity due to injected carriers in terahertz range is not so great as in millimeter wave one. Moreover, the parameters of p-i-n-structure, like the shape and sizes of...

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Bibliographische Detailangaben

Hauptverfasser:	Tecpoyotl-Torres, M., Grimalsky, V., Gutierrez, E., Koshevaya, S., Sanchez Mondragon, J., Moroz, I.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Astrophysics Boundary conditions Electrodes Frequency Gallium arsenide High speed optical techniques Millimeter wave technology Optical modulation Optical surface waves Shape
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