Plasmon terahertz response of a slot diode with a two-dimensional electron channel

High-frequency response of field-effect transistors and diodes with two-dimensional electron channels is strongly affected by plasma oscillations in the channel. This phenomenon in its various manifestations can be used for the detection, frequency multiplication and generation of terahertz radiatio...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Popov, V.V., Tsymbalov, G.M., Shur, M.S., Knap, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 588 Vol.2
container_issue
container_start_page 586
container_title
container_volume 2
creator Popov, V.V.
Tsymbalov, G.M.
Shur, M.S.
Knap, W.
description High-frequency response of field-effect transistors and diodes with two-dimensional electron channels is strongly affected by plasma oscillations in the channel. This phenomenon in its various manifestations can be used for the detection, frequency multiplication and generation of terahertz radiation. One of the main parameters of a device, which determines its high-frequency properties, is the device impedance. We calculate here the impedance of a slot diode with conductively contacted two-dimensional electron channel using the full system of the Maxwell equations. In this way, we account for the radiation resistance and inter-contact capacitance from first principles.
doi_str_mv 10.1109/MSMW.2004.1346027
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1346027</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1346027</ieee_id><sourcerecordid>1346027</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-d4ffdf0800a1076db1022e219d790c277262dc2c61e6b1353d7bfc4d858acbe03</originalsourceid><addsrcrecordid>eNotj8tKAzEYRgMiqLUPIG7yAlP_XGYys5TiDVoUL7gsmeQPE8lMShIo-vQOtN_mwFkc-Ai5YbBiDLq77cf2e8UB5IoJ2QBXZ-QKVAuilYyJC7LM-QfmyVpCyy_J-1vQeYwTLZj0gKn80YR5H6eMNDqqaQ6xUOujRXrwZZhNOcTK-hGn7OOkA8WApqQ5YQY9TRiuybnTIePyxAX5enz4XD9Xm9enl_X9pvJM1aWy0jnroAXQDFRjewacI2edVR0YrhRvuDXcNAybnolaWNU7I21bt9r0CGJBbo9dj4i7ffKjTr-7023xD01cTqE</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Plasmon terahertz response of a slot diode with a two-dimensional electron channel</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Popov, V.V. ; Tsymbalov, G.M. ; Shur, M.S. ; Knap, W.</creator><creatorcontrib>Popov, V.V. ; Tsymbalov, G.M. ; Shur, M.S. ; Knap, W.</creatorcontrib><description>High-frequency response of field-effect transistors and diodes with two-dimensional electron channels is strongly affected by plasma oscillations in the channel. This phenomenon in its various manifestations can be used for the detection, frequency multiplication and generation of terahertz radiation. One of the main parameters of a device, which determines its high-frequency properties, is the device impedance. We calculate here the impedance of a slot diode with conductively contacted two-dimensional electron channel using the full system of the Maxwell equations. In this way, we account for the radiation resistance and inter-contact capacitance from first principles.</description><identifier>ISBN: 0780384113</identifier><identifier>ISBN: 9780780384118</identifier><identifier>DOI: 10.1109/MSMW.2004.1346027</identifier><language>eng</language><publisher>IEEE</publisher><subject>Diodes ; Electrons ; FETs ; Frequency conversion ; Impedance ; Maxwell equations ; Plasma devices ; Plasma properties ; Plasmons ; Radiation detectors</subject><ispartof>The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828), 2004, Vol.2, p.586-588 Vol.2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1346027$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1346027$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Popov, V.V.</creatorcontrib><creatorcontrib>Tsymbalov, G.M.</creatorcontrib><creatorcontrib>Shur, M.S.</creatorcontrib><creatorcontrib>Knap, W.</creatorcontrib><title>Plasmon terahertz response of a slot diode with a two-dimensional electron channel</title><title>The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828)</title><addtitle>MSMW</addtitle><description>High-frequency response of field-effect transistors and diodes with two-dimensional electron channels is strongly affected by plasma oscillations in the channel. This phenomenon in its various manifestations can be used for the detection, frequency multiplication and generation of terahertz radiation. One of the main parameters of a device, which determines its high-frequency properties, is the device impedance. We calculate here the impedance of a slot diode with conductively contacted two-dimensional electron channel using the full system of the Maxwell equations. In this way, we account for the radiation resistance and inter-contact capacitance from first principles.</description><subject>Diodes</subject><subject>Electrons</subject><subject>FETs</subject><subject>Frequency conversion</subject><subject>Impedance</subject><subject>Maxwell equations</subject><subject>Plasma devices</subject><subject>Plasma properties</subject><subject>Plasmons</subject><subject>Radiation detectors</subject><isbn>0780384113</isbn><isbn>9780780384118</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tKAzEYRgMiqLUPIG7yAlP_XGYys5TiDVoUL7gsmeQPE8lMShIo-vQOtN_mwFkc-Ai5YbBiDLq77cf2e8UB5IoJ2QBXZ-QKVAuilYyJC7LM-QfmyVpCyy_J-1vQeYwTLZj0gKn80YR5H6eMNDqqaQ6xUOujRXrwZZhNOcTK-hGn7OOkA8WApqQ5YQY9TRiuybnTIePyxAX5enz4XD9Xm9enl_X9pvJM1aWy0jnroAXQDFRjewacI2edVR0YrhRvuDXcNAybnolaWNU7I21bt9r0CGJBbo9dj4i7ffKjTr-7023xD01cTqE</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Popov, V.V.</creator><creator>Tsymbalov, G.M.</creator><creator>Shur, M.S.</creator><creator>Knap, W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2004</creationdate><title>Plasmon terahertz response of a slot diode with a two-dimensional electron channel</title><author>Popov, V.V. ; Tsymbalov, G.M. ; Shur, M.S. ; Knap, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-d4ffdf0800a1076db1022e219d790c277262dc2c61e6b1353d7bfc4d858acbe03</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Diodes</topic><topic>Electrons</topic><topic>FETs</topic><topic>Frequency conversion</topic><topic>Impedance</topic><topic>Maxwell equations</topic><topic>Plasma devices</topic><topic>Plasma properties</topic><topic>Plasmons</topic><topic>Radiation detectors</topic><toplevel>online_resources</toplevel><creatorcontrib>Popov, V.V.</creatorcontrib><creatorcontrib>Tsymbalov, G.M.</creatorcontrib><creatorcontrib>Shur, M.S.</creatorcontrib><creatorcontrib>Knap, W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Popov, V.V.</au><au>Tsymbalov, G.M.</au><au>Shur, M.S.</au><au>Knap, W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Plasmon terahertz response of a slot diode with a two-dimensional electron channel</atitle><btitle>The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828)</btitle><stitle>MSMW</stitle><date>2004</date><risdate>2004</risdate><volume>2</volume><spage>586</spage><epage>588 Vol.2</epage><pages>586-588 Vol.2</pages><isbn>0780384113</isbn><isbn>9780780384118</isbn><abstract>High-frequency response of field-effect transistors and diodes with two-dimensional electron channels is strongly affected by plasma oscillations in the channel. This phenomenon in its various manifestations can be used for the detection, frequency multiplication and generation of terahertz radiation. One of the main parameters of a device, which determines its high-frequency properties, is the device impedance. We calculate here the impedance of a slot diode with conductively contacted two-dimensional electron channel using the full system of the Maxwell equations. In this way, we account for the radiation resistance and inter-contact capacitance from first principles.</abstract><pub>IEEE</pub><doi>10.1109/MSMW.2004.1346027</doi></addata></record>
fulltext fulltext_linktorsrc
identifier ISBN: 0780384113
ispartof The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828), 2004, Vol.2, p.586-588 Vol.2
issn
language eng
recordid cdi_ieee_primary_1346027
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Diodes
Electrons
FETs
Frequency conversion
Impedance
Maxwell equations
Plasma devices
Plasma properties
Plasmons
Radiation detectors
title Plasmon terahertz response of a slot diode with a two-dimensional electron channel
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T03%3A42%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Plasmon%20terahertz%20response%20of%20a%20slot%20diode%20with%20a%20two-dimensional%20electron%20channel&rft.btitle=The%20Fifth%20International%20Kharkov%20Symposium%20on%20Physics%20and%20Engineering%20of%20Microwaves,%20Millimeter,%20and%20Submillimeter%20Waves%20(IEEE%20Cat.%20No.04EX828)&rft.au=Popov,%20V.V.&rft.date=2004&rft.volume=2&rft.spage=586&rft.epage=588%20Vol.2&rft.pages=586-588%20Vol.2&rft.isbn=0780384113&rft.isbn_list=9780780384118&rft_id=info:doi/10.1109/MSMW.2004.1346027&rft_dat=%3Cieee_6IE%3E1346027%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1346027&rfr_iscdi=true