Plasmon terahertz response of a slot diode with a two-dimensional electron channel
High-frequency response of field-effect transistors and diodes with two-dimensional electron channels is strongly affected by plasma oscillations in the channel. This phenomenon in its various manifestations can be used for the detection, frequency multiplication and generation of terahertz radiatio...
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creator | Popov, V.V. Tsymbalov, G.M. Shur, M.S. Knap, W. |
description | High-frequency response of field-effect transistors and diodes with two-dimensional electron channels is strongly affected by plasma oscillations in the channel. This phenomenon in its various manifestations can be used for the detection, frequency multiplication and generation of terahertz radiation. One of the main parameters of a device, which determines its high-frequency properties, is the device impedance. We calculate here the impedance of a slot diode with conductively contacted two-dimensional electron channel using the full system of the Maxwell equations. In this way, we account for the radiation resistance and inter-contact capacitance from first principles. |
doi_str_mv | 10.1109/MSMW.2004.1346027 |
format | Conference Proceeding |
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This phenomenon in its various manifestations can be used for the detection, frequency multiplication and generation of terahertz radiation. One of the main parameters of a device, which determines its high-frequency properties, is the device impedance. We calculate here the impedance of a slot diode with conductively contacted two-dimensional electron channel using the full system of the Maxwell equations. In this way, we account for the radiation resistance and inter-contact capacitance from first principles.</description><identifier>ISBN: 0780384113</identifier><identifier>ISBN: 9780780384118</identifier><identifier>DOI: 10.1109/MSMW.2004.1346027</identifier><language>eng</language><publisher>IEEE</publisher><subject>Diodes ; Electrons ; FETs ; Frequency conversion ; Impedance ; Maxwell equations ; Plasma devices ; Plasma properties ; Plasmons ; Radiation detectors</subject><ispartof>The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. 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No.04EX828)</title><addtitle>MSMW</addtitle><description>High-frequency response of field-effect transistors and diodes with two-dimensional electron channels is strongly affected by plasma oscillations in the channel. This phenomenon in its various manifestations can be used for the detection, frequency multiplication and generation of terahertz radiation. One of the main parameters of a device, which determines its high-frequency properties, is the device impedance. We calculate here the impedance of a slot diode with conductively contacted two-dimensional electron channel using the full system of the Maxwell equations. In this way, we account for the radiation resistance and inter-contact capacitance from first principles.</description><subject>Diodes</subject><subject>Electrons</subject><subject>FETs</subject><subject>Frequency conversion</subject><subject>Impedance</subject><subject>Maxwell equations</subject><subject>Plasma devices</subject><subject>Plasma properties</subject><subject>Plasmons</subject><subject>Radiation detectors</subject><isbn>0780384113</isbn><isbn>9780780384118</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tKAzEYRgMiqLUPIG7yAlP_XGYys5TiDVoUL7gsmeQPE8lMShIo-vQOtN_mwFkc-Ai5YbBiDLq77cf2e8UB5IoJ2QBXZ-QKVAuilYyJC7LM-QfmyVpCyy_J-1vQeYwTLZj0gKn80YR5H6eMNDqqaQ6xUOujRXrwZZhNOcTK-hGn7OOkA8WApqQ5YQY9TRiuybnTIePyxAX5enz4XD9Xm9enl_X9pvJM1aWy0jnroAXQDFRjewacI2edVR0YrhRvuDXcNAybnolaWNU7I21bt9r0CGJBbo9dj4i7ffKjTr-7023xD01cTqE</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Popov, V.V.</creator><creator>Tsymbalov, G.M.</creator><creator>Shur, M.S.</creator><creator>Knap, W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2004</creationdate><title>Plasmon terahertz response of a slot diode with a two-dimensional electron channel</title><author>Popov, V.V. ; Tsymbalov, G.M. ; Shur, M.S. ; Knap, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-d4ffdf0800a1076db1022e219d790c277262dc2c61e6b1353d7bfc4d858acbe03</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Diodes</topic><topic>Electrons</topic><topic>FETs</topic><topic>Frequency conversion</topic><topic>Impedance</topic><topic>Maxwell equations</topic><topic>Plasma devices</topic><topic>Plasma properties</topic><topic>Plasmons</topic><topic>Radiation detectors</topic><toplevel>online_resources</toplevel><creatorcontrib>Popov, V.V.</creatorcontrib><creatorcontrib>Tsymbalov, G.M.</creatorcontrib><creatorcontrib>Shur, M.S.</creatorcontrib><creatorcontrib>Knap, W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Popov, V.V.</au><au>Tsymbalov, G.M.</au><au>Shur, M.S.</au><au>Knap, W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Plasmon terahertz response of a slot diode with a two-dimensional electron channel</atitle><btitle>The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828)</btitle><stitle>MSMW</stitle><date>2004</date><risdate>2004</risdate><volume>2</volume><spage>586</spage><epage>588 Vol.2</epage><pages>586-588 Vol.2</pages><isbn>0780384113</isbn><isbn>9780780384118</isbn><abstract>High-frequency response of field-effect transistors and diodes with two-dimensional electron channels is strongly affected by plasma oscillations in the channel. This phenomenon in its various manifestations can be used for the detection, frequency multiplication and generation of terahertz radiation. One of the main parameters of a device, which determines its high-frequency properties, is the device impedance. We calculate here the impedance of a slot diode with conductively contacted two-dimensional electron channel using the full system of the Maxwell equations. In this way, we account for the radiation resistance and inter-contact capacitance from first principles.</abstract><pub>IEEE</pub><doi>10.1109/MSMW.2004.1346027</doi></addata></record> |
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identifier | ISBN: 0780384113 |
ispartof | The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828), 2004, Vol.2, p.586-588 Vol.2 |
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language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Diodes Electrons FETs Frequency conversion Impedance Maxwell equations Plasma devices Plasma properties Plasmons Radiation detectors |
title | Plasmon terahertz response of a slot diode with a two-dimensional electron channel |
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