Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime

A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 μm were fabricated and tested. An internal losses coefficient as low as 4 cm/sup -1/ and a high internal quantum efficiency of 70%...

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Veröffentlicht in:	IEEE photonics technology letters 2004-11, Vol.16 (11), p.2424-2426
Hauptverfasser:	Salhi, A., Rouillard, Y., Angellier, J., Garcia, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Diode lasers Gas lasers Molecular beam epitaxial growth Optical losses Optical waveguides Quantum well lasers Semiconductor lasers Temperature Threshold current Waveguide lasers
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