Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime
A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 μm were fabricated and tested. An internal losses coefficient as low as 4 cm/sup -1/ and a high internal quantum efficiency of 70%...
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| Veröffentlicht in: | IEEE photonics technology letters 2004-11, Vol.16 (11), p.2424-2426 |
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| container_issue | 11 |
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| container_title | IEEE photonics technology letters |
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| creator | Salhi, A. Rouillard, Y. Angellier, J. Garcia, M. |
| description | A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 μm were fabricated and tested. An internal losses coefficient as low as 4 cm/sup -1/ and a high internal quantum efficiency of 70% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm 2 . The threshold current density per quantum well is as low as 34 A/cm 2 for a 3-mm-long cavity. |
| doi_str_mv | 10.1109/LPT.2004.835623 |
| format | Article |
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Shallow mesa ridge-waveguide lasers with stripe width of 100 μm were fabricated and tested. An internal losses coefficient as low as 4 cm/sup -1/ and a high internal quantum efficiency of 70% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm 2 . The threshold current density per quantum well is as low as 34 A/cm 2 for a 3-mm-long cavity.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2004.835623</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>IEEE</publisher><subject>Diode lasers ; Gas lasers ; Molecular beam epitaxial growth ; Optical losses ; Optical waveguides ; Quantum well lasers ; Semiconductor lasers ; Temperature ; Threshold current ; Waveguide lasers</subject><ispartof>IEEE photonics technology letters, 2004-11, Vol.16 (11), p.2424-2426</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1344055$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1344055$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Salhi, A.</creatorcontrib><creatorcontrib>Rouillard, Y.</creatorcontrib><creatorcontrib>Angellier, J.</creatorcontrib><creatorcontrib>Garcia, M.</creatorcontrib><title>Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 μm were fabricated and tested. An internal losses coefficient as low as 4 cm/sup -1/ and a high internal quantum efficiency of 70% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm 2 . The threshold current density per quantum well is as low as 34 A/cm 2 for a 3-mm-long cavity.</description><subject>Diode lasers</subject><subject>Gas lasers</subject><subject>Molecular beam epitaxial growth</subject><subject>Optical losses</subject><subject>Optical waveguides</subject><subject>Quantum well lasers</subject><subject>Semiconductor lasers</subject><subject>Temperature</subject><subject>Threshold current</subject><subject>Waveguide lasers</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotzMtKw0AYBeBBFKzVtQs38wIT55pJlqVoLBQUrG7Ln8lvO5Jkykxi6bv5DD6T9bI6H4fDIeRa8EwIXt4un1aZ5FxnhTK5VCdkIkotGBdWnx7NjxZCmXNykdI750IbpSdkfMV4YG3Ys2EbMW1D21CZafb12dEKFv0sPdds1lbwA9pCwkgbHxpMNOwwwuD7DYWBxhA6OmD3240Rqe_psEXqQn-cjGFMbA8fSCNufIeX5OwN2oRX_zklL_d3q_kDWz5Wi_lsybywamANb2rQYEuHShq0HLTUWubOlbwwpZGFy2tRWqFrV6i6EJBbpcFwdArANmpKbv5-PSKud9F3EA9robTmxqhv8vxbXg</recordid><startdate>200411</startdate><enddate>200411</enddate><creator>Salhi, A.</creator><creator>Rouillard, Y.</creator><creator>Angellier, J.</creator><creator>Garcia, M.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope></search><sort><creationdate>200411</creationdate><title>Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime</title><author>Salhi, A. ; Rouillard, Y. ; Angellier, J. ; Garcia, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i173t-d0dba4a79ce325e70a424426cc90859528c6b19714bc83b81a6734a50ec3aa7d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Diode lasers</topic><topic>Gas lasers</topic><topic>Molecular beam epitaxial growth</topic><topic>Optical losses</topic><topic>Optical waveguides</topic><topic>Quantum well lasers</topic><topic>Semiconductor lasers</topic><topic>Temperature</topic><topic>Threshold current</topic><topic>Waveguide lasers</topic><toplevel>online_resources</toplevel><creatorcontrib>Salhi, A.</creatorcontrib><creatorcontrib>Rouillard, Y.</creatorcontrib><creatorcontrib>Angellier, J.</creatorcontrib><creatorcontrib>Garcia, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Salhi, A.</au><au>Rouillard, Y.</au><au>Angellier, J.</au><au>Garcia, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2004-11</date><risdate>2004</risdate><volume>16</volume><issue>11</issue><spage>2424</spage><epage>2426</epage><pages>2424-2426</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>A GaInAsSb-AlGaAsSb large optical cavity triple-quantum-well structure was grown by molecular-beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 100 μm were fabricated and tested. An internal losses coefficient as low as 4 cm/sup -1/ and a high internal quantum efficiency of 70% were obtained. In the pulsed regime at room temperature, the extrapolated threshold current densities for infinite cavity length is 78 A/cm 2 . The threshold current density per quantum well is as low as 34 A/cm 2 for a 3-mm-long cavity.</abstract><pub>IEEE</pub><doi>10.1109/LPT.2004.835623</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE photonics technology letters, 2004-11, Vol.16 (11), p.2424-2426 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Diode lasers Gas lasers Molecular beam epitaxial growth Optical losses Optical waveguides Quantum well lasers Semiconductor lasers Temperature Threshold current Waveguide lasers |
| title | Very-low-threshold 2.4-μm GaInAsSb-AlGaAsSb laser diodes operating at room temperature in the continuous-wave regime |
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