A Josephson junction to FET high speed line driver made of TlCaBaCuO
A Tl-Ca-Ba-Cu-O superconducting flux flow transistor (SFFT) was used as an active impedance converter between Josephson and FET circuitry. The input of the flux flow device is a control line of low impedance that can be driven by a tunnel junction. The output is the signal across the SFFT which is m...
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Veröffentlicht in: | IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) 1991-03, Vol.27 (2), p.3284-3288 |
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container_title | IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) |
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creator | Martens, J.S. Ginley, D.S. Beyer, J.B. Nordman, J.E. Hohenwarter, G.K.G. |
description | A Tl-Ca-Ba-Cu-O superconducting flux flow transistor (SFFT) was used as an active impedance converter between Josephson and FET circuitry. The input of the flux flow device is a control line of low impedance that can be driven by a tunnel junction. The output is the signal across the SFFT which is made of a parallel array of weak links. The output impedance is typically greater than 5 Omega , with a maximum voltage swing of over 100 mV into a 50- Omega system. The switching of an all-Nb junction induced a 90-mV voltage swing at the FET input and over 200 mV at the FET output. The line driver can operate anywhere between 4.2 K and 85 K with minor changes in speed (+or-5 ps) and output level (+or-10 mV). The switching time measured was about 100 ps and was fixture limited. |
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The input of the flux flow device is a control line of low impedance that can be driven by a tunnel junction. The output is the signal across the SFFT which is made of a parallel array of weak links. The output impedance is typically greater than 5 Omega , with a maximum voltage swing of over 100 mV into a 50- Omega system. The switching of an all-Nb junction induced a 90-mV voltage swing at the FET input and over 200 mV at the FET output. The line driver can operate anywhere between 4.2 K and 85 K with minor changes in speed (+or-5 ps) and output level (+or-10 mV). The switching time measured was about 100 ps and was fixture limited.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/20.133914</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>ALKALINE EARTH METAL COMPOUNDS ; Applied sciences ; BARIUM COMPOUNDS ; BARIUM OXIDES ; CALCIUM COMPOUNDS ; CALCIUM OXIDES ; CHALCOGENIDES ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CONTROL SYSTEMS ; COPPER COMPOUNDS ; COPPER OXIDES ; Driver circuits ; ELECTRIC CONDUCTIVITY ; ELECTRICAL PROPERTIES ; ELECTRONIC CIRCUITS ; Electronics ; ELEMENTS ; Exact sciences and technology ; FETs ; FIELD EFFECT TRANSISTORS ; FREQUENCY CONVERTERS ; High temperature superconductors ; Impedance ; JOSEPHSON JUNCTIONS ; JUNCTIONS ; Laboratories ; MAGNETIC FLUX ; MATHEMATICAL MODELS ; METALS ; NIOBIUM ; NUCLEAR MODELS ; Optical films ; OXIDES ; OXYGEN COMPOUNDS ; PHYSICAL PROPERTIES ; SEMICONDUCTOR DEVICES ; Semiconductor electronics. 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Solid state devices ; Superconducting devices ; SUPERCONDUCTING JUNCTIONS ; SUPERCONDUCTIVITY ; Switches ; SWITCHING CIRCUITS ; THALLIUM COMPOUNDS ; TRANSISTORS ; TRANSITION ELEMENT COMPOUNDS ; TRANSITION ELEMENTS 665412 -- Superconducting Devices-- (1992-) ; Voltage ; VOLTAGE REGULATORS ; WEAK-COUPLING MODEL</subject><ispartof>IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States), 1991-03, Vol.27 (2), p.3284-3288</ispartof><rights>1991 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c363t-71497f79f584f5e49e329ab2f095e170130b537c14c9ff62b580994a74cae8aa3</citedby><cites>FETCH-LOGICAL-c363t-71497f79f584f5e49e329ab2f095e170130b537c14c9ff62b580994a74cae8aa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/133914$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,309,310,314,780,784,789,790,796,885,23930,23931,25140,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/133914$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19600126$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/5923675$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Martens, J.S.</creatorcontrib><creatorcontrib>Ginley, D.S.</creatorcontrib><creatorcontrib>Beyer, J.B.</creatorcontrib><creatorcontrib>Nordman, J.E.</creatorcontrib><creatorcontrib>Hohenwarter, G.K.G.</creatorcontrib><title>A Josephson junction to FET high speed line driver made of TlCaBaCuO</title><title>IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)</title><addtitle>TMAG</addtitle><description>A Tl-Ca-Ba-Cu-O superconducting flux flow transistor (SFFT) was used as an active impedance converter between Josephson and FET circuitry. The input of the flux flow device is a control line of low impedance that can be driven by a tunnel junction. The output is the signal across the SFFT which is made of a parallel array of weak links. The output impedance is typically greater than 5 Omega , with a maximum voltage swing of over 100 mV into a 50- Omega system. The switching of an all-Nb junction induced a 90-mV voltage swing at the FET input and over 200 mV at the FET output. The line driver can operate anywhere between 4.2 K and 85 K with minor changes in speed (+or-5 ps) and output level (+or-10 mV). The switching time measured was about 100 ps and was fixture limited.</description><subject>ALKALINE EARTH METAL COMPOUNDS</subject><subject>Applied sciences</subject><subject>BARIUM COMPOUNDS</subject><subject>BARIUM OXIDES</subject><subject>CALCIUM COMPOUNDS</subject><subject>CALCIUM OXIDES</subject><subject>CHALCOGENIDES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CONTROL SYSTEMS</subject><subject>COPPER COMPOUNDS</subject><subject>COPPER OXIDES</subject><subject>Driver circuits</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRICAL PROPERTIES</subject><subject>ELECTRONIC CIRCUITS</subject><subject>Electronics</subject><subject>ELEMENTS</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>FREQUENCY CONVERTERS</subject><subject>High temperature superconductors</subject><subject>Impedance</subject><subject>JOSEPHSON JUNCTIONS</subject><subject>JUNCTIONS</subject><subject>Laboratories</subject><subject>MAGNETIC FLUX</subject><subject>MATHEMATICAL MODELS</subject><subject>METALS</subject><subject>NIOBIUM</subject><subject>NUCLEAR MODELS</subject><subject>Optical films</subject><subject>OXIDES</subject><subject>OXYGEN COMPOUNDS</subject><subject>PHYSICAL PROPERTIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Superconducting devices</subject><subject>SUPERCONDUCTING JUNCTIONS</subject><subject>SUPERCONDUCTIVITY</subject><subject>Switches</subject><subject>SWITCHING CIRCUITS</subject><subject>THALLIUM COMPOUNDS</subject><subject>TRANSISTORS</subject><subject>TRANSITION ELEMENT COMPOUNDS</subject><subject>TRANSITION ELEMENTS 665412 -- Superconducting Devices-- (1992-)</subject><subject>Voltage</subject><subject>VOLTAGE REGULATORS</subject><subject>WEAK-COUPLING MODEL</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqNkM1Lw0AQxRdRsFYPXj0tgoKH6H4m2WON3xR6qeew3c6aLWk2ZhPB_961KXj19GaY33sDD6FzSm4pJeqOReVcUXGAJlQJmhCSqkM0IYTmiRKpOEYnIWziKiQlE_Qww28-QFsF3-DN0JjexaH3-OlxiSv3UeHQAqxx7RrA6859QYe3eg3YW7ysC32vi2Fxio6srgOc7XWK3qO9eEnmi-fXYjZPDE95n2RUqMxmyspcWAlCAWdKr5glSgLNCOVkJXlmqDDK2pStZE6UEjoTRkOuNZ-iyzHXh96VwbgeTGV804DpS6kYTzMZoesRajv_OUDoy60LBupaN-CHULJcEZaz9B8g55IwFsGbETSdD6EDW7ad2-ruu6Sk_G29ZFF3rUf2ah-qg9G17XRjXPgzqDRWv3t-MXIOAP7OY8gPTuiFwg</recordid><startdate>19910301</startdate><enddate>19910301</enddate><creator>Martens, J.S.</creator><creator>Ginley, D.S.</creator><creator>Beyer, J.B.</creator><creator>Nordman, J.E.</creator><creator>Hohenwarter, G.K.G.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>OTOTI</scope></search><sort><creationdate>19910301</creationdate><title>A Josephson junction to FET high speed line driver made of TlCaBaCuO</title><author>Martens, J.S. ; Ginley, D.S. ; Beyer, J.B. ; Nordman, J.E. ; Hohenwarter, G.K.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c363t-71497f79f584f5e49e329ab2f095e170130b537c14c9ff62b580994a74cae8aa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>ALKALINE EARTH METAL COMPOUNDS</topic><topic>Applied sciences</topic><topic>BARIUM COMPOUNDS</topic><topic>BARIUM OXIDES</topic><topic>CALCIUM COMPOUNDS</topic><topic>CALCIUM OXIDES</topic><topic>CHALCOGENIDES</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CONTROL SYSTEMS</topic><topic>COPPER COMPOUNDS</topic><topic>COPPER OXIDES</topic><topic>Driver circuits</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRICAL PROPERTIES</topic><topic>ELECTRONIC CIRCUITS</topic><topic>Electronics</topic><topic>ELEMENTS</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>FREQUENCY CONVERTERS</topic><topic>High temperature superconductors</topic><topic>Impedance</topic><topic>JOSEPHSON JUNCTIONS</topic><topic>JUNCTIONS</topic><topic>Laboratories</topic><topic>MAGNETIC FLUX</topic><topic>MATHEMATICAL MODELS</topic><topic>METALS</topic><topic>NIOBIUM</topic><topic>NUCLEAR MODELS</topic><topic>Optical films</topic><topic>OXIDES</topic><topic>OXYGEN COMPOUNDS</topic><topic>PHYSICAL PROPERTIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Superconducting devices</topic><topic>SUPERCONDUCTING JUNCTIONS</topic><topic>SUPERCONDUCTIVITY</topic><topic>Switches</topic><topic>SWITCHING CIRCUITS</topic><topic>THALLIUM COMPOUNDS</topic><topic>TRANSISTORS</topic><topic>TRANSITION ELEMENT COMPOUNDS</topic><topic>TRANSITION ELEMENTS 665412 -- Superconducting Devices-- (1992-)</topic><topic>Voltage</topic><topic>VOLTAGE REGULATORS</topic><topic>WEAK-COUPLING MODEL</topic><toplevel>online_resources</toplevel><creatorcontrib>Martens, J.S.</creatorcontrib><creatorcontrib>Ginley, D.S.</creatorcontrib><creatorcontrib>Beyer, J.B.</creatorcontrib><creatorcontrib>Nordman, J.E.</creatorcontrib><creatorcontrib>Hohenwarter, G.K.G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Martens, J.S.</au><au>Ginley, D.S.</au><au>Beyer, J.B.</au><au>Nordman, J.E.</au><au>Hohenwarter, G.K.G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Josephson junction to FET high speed line driver made of TlCaBaCuO</atitle><jtitle>IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)</jtitle><stitle>TMAG</stitle><date>1991-03-01</date><risdate>1991</risdate><volume>27</volume><issue>2</issue><spage>3284</spage><epage>3288</epage><pages>3284-3288</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>A Tl-Ca-Ba-Cu-O superconducting flux flow transistor (SFFT) was used as an active impedance converter between Josephson and FET circuitry. The input of the flux flow device is a control line of low impedance that can be driven by a tunnel junction. The output is the signal across the SFFT which is made of a parallel array of weak links. The output impedance is typically greater than 5 Omega , with a maximum voltage swing of over 100 mV into a 50- Omega system. The switching of an all-Nb junction induced a 90-mV voltage swing at the FET input and over 200 mV at the FET output. The line driver can operate anywhere between 4.2 K and 85 K with minor changes in speed (+or-5 ps) and output level (+or-10 mV). The switching time measured was about 100 ps and was fixture limited.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/20.133914</doi><tpages>5</tpages></addata></record> |
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identifier | ISSN: 0018-9464 |
ispartof | IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States), 1991-03, Vol.27 (2), p.3284-3288 |
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language | eng |
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source | IEEE Electronic Library (IEL) |
subjects | ALKALINE EARTH METAL COMPOUNDS Applied sciences BARIUM COMPOUNDS BARIUM OXIDES CALCIUM COMPOUNDS CALCIUM OXIDES CHALCOGENIDES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CONTROL SYSTEMS COPPER COMPOUNDS COPPER OXIDES Driver circuits ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES ELECTRONIC CIRCUITS Electronics ELEMENTS Exact sciences and technology FETs FIELD EFFECT TRANSISTORS FREQUENCY CONVERTERS High temperature superconductors Impedance JOSEPHSON JUNCTIONS JUNCTIONS Laboratories MAGNETIC FLUX MATHEMATICAL MODELS METALS NIOBIUM NUCLEAR MODELS Optical films OXIDES OXYGEN COMPOUNDS PHYSICAL PROPERTIES SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Superconducting devices SUPERCONDUCTING JUNCTIONS SUPERCONDUCTIVITY Switches SWITCHING CIRCUITS THALLIUM COMPOUNDS TRANSISTORS TRANSITION ELEMENT COMPOUNDS TRANSITION ELEMENTS 665412 -- Superconducting Devices-- (1992-) Voltage VOLTAGE REGULATORS WEAK-COUPLING MODEL |
title | A Josephson junction to FET high speed line driver made of TlCaBaCuO |
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