A highly integrated Ka-band MMIC quadrupler

A highly integrated Ka-band MMIC quadrupler

A highly integrated monolithic microwave integrated circuit (MMIC) frequency quadrupler was realized in a 0.25 /spl mu/m pHEMT technology on GaAs. The quadrupler consists of two types of doublers and two buffer amplifiers. An active balun and a planar balun using an asymmetric coupled line were used...

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Bibliographische Detailangaben
Hauptverfasser: Kamozaki, K., Bos, T.A., Camargo, E.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Amplifiers
Applied sciences
Circuit properties
Coupling circuits
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Frequency
Gallium arsenide
Impedance matching
Integrated circuit technology
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave integrated circuits
Microwave technology
MMICs
Monolithic integrated circuits
PHEMTs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Beschreibung
Zusammenfassung:A highly integrated monolithic microwave integrated circuit (MMIC) frequency quadrupler was realized in a 0.25 /spl mu/m pHEMT technology on GaAs. The quadrupler consists of two types of doublers and two buffer amplifiers. An active balun and a planar balun using an asymmetric coupled line were used for each doubler to reduce the chip size and achieve higher gain and output power of 19.4 dBm for an input power of 5 dBm over an output frequency range of 36-40 GHz. The maximum conversion gain of 16.4 dB was measured for an input power of 2 dBm. In saturation, the fundamental is suppressed by 58 dB and the third harmonic by 66 dB.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2004.1335835