Effect of channel width, length, and latent damage on NBTI
pMOSFETs negatively biased under operating conditions and subjected to high temperature experience a progressive threshold voltage shift (Negative Bias Temperature Instability, NBTI). NBTI depends on several technological factors. We are showing in this paper a comprehensive study which discuss the...
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| creator | Cellere, G. Valentini, M.G. Paccagnella, A. |
| description | pMOSFETs negatively biased under operating conditions and subjected to high temperature experience a progressive threshold voltage shift (Negative Bias Temperature Instability, NBTI). NBTI depends on several technological factors. We are showing in this paper a comprehensive study which discuss the NBTI dependence on channel length and channel width: overall, devices with shorter and wider channel are the most sensitive to NBTI. We are also discussing the strong sensitivity of NBTI to latent plasma induced damage: this makes NBTI a reliable index of latent damage. |
| doi_str_mv | 10.1109/ICICDT.2004.1309971 |
| format | Conference Proceeding |
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NBTI depends on several technological factors. We are showing in this paper a comprehensive study which discuss the NBTI dependence on channel length and channel width: overall, devices with shorter and wider channel are the most sensitive to NBTI. We are also discussing the strong sensitivity of NBTI to latent plasma induced damage: this makes NBTI a reliable index of latent damage.</description><identifier>ISBN: 0780385284</identifier><identifier>ISBN: 9780780385283</identifier><identifier>DOI: 10.1109/ICICDT.2004.1309971</identifier><language>eng ; jpn</language><publisher>IEEE</publisher><subject>MOSFETs ; Negative bias temperature instability ; Niobium compounds ; Plasma devices ; Plasma temperature ; Stress ; Temperature dependence ; Temperature sensors ; Threshold voltage ; Titanium compounds</subject><ispartof>2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. 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No.04EX866)</title><addtitle>ICICDT</addtitle><description>pMOSFETs negatively biased under operating conditions and subjected to high temperature experience a progressive threshold voltage shift (Negative Bias Temperature Instability, NBTI). NBTI depends on several technological factors. We are showing in this paper a comprehensive study which discuss the NBTI dependence on channel length and channel width: overall, devices with shorter and wider channel are the most sensitive to NBTI. We are also discussing the strong sensitivity of NBTI to latent plasma induced damage: this makes NBTI a reliable index of latent damage.</description><subject>MOSFETs</subject><subject>Negative bias temperature instability</subject><subject>Niobium compounds</subject><subject>Plasma devices</subject><subject>Plasma temperature</subject><subject>Stress</subject><subject>Temperature dependence</subject><subject>Temperature sensors</subject><subject>Threshold voltage</subject><subject>Titanium compounds</subject><isbn>0780385284</isbn><isbn>9780780385283</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2004</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj0tOwzAUAC0hJKD0BN34ACS8509ss4NQIFLVbsK6cuLnNih1UWMJcXtAdDazG2kYWyCUiODum7qpn9tSAKgSJThn8ILdgLEgrRZWXbH5NH3AL0orcHDNHpYxUp_5MfJ-71OikX8NIe_v-Ehp92efAh99ppR58Ae_I35MfP3UNrfsMvpxovnZM_b-smzrt2K1eW3qx1UxoFa5QNdTp13wFtEZUVXORwlWdCJ0EStBHfWAyiqQDhVE3cfgndEYTFS6Qzlji__uQETbz9Nw8Kfv7XlP_gBh00QP</recordid><startdate>2004</startdate><enddate>2004</enddate><creator>Cellere, G.</creator><creator>Valentini, M.G.</creator><creator>Paccagnella, A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2004</creationdate><title>Effect of channel width, length, and latent damage on NBTI</title><author>Cellere, G. ; Valentini, M.G. ; Paccagnella, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i154t-19ceb59da811972669af3082b2dbf162ebec01484039140f5cfda9751d7f45b13</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng ; jpn</language><creationdate>2004</creationdate><topic>MOSFETs</topic><topic>Negative bias temperature instability</topic><topic>Niobium compounds</topic><topic>Plasma devices</topic><topic>Plasma temperature</topic><topic>Stress</topic><topic>Temperature dependence</topic><topic>Temperature sensors</topic><topic>Threshold voltage</topic><topic>Titanium compounds</topic><toplevel>online_resources</toplevel><creatorcontrib>Cellere, G.</creatorcontrib><creatorcontrib>Valentini, M.G.</creatorcontrib><creatorcontrib>Paccagnella, A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cellere, G.</au><au>Valentini, M.G.</au><au>Paccagnella, A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Effect of channel width, length, and latent damage on NBTI</atitle><btitle>2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)</btitle><stitle>ICICDT</stitle><date>2004</date><risdate>2004</risdate><spage>303</spage><epage>306</epage><pages>303-306</pages><isbn>0780385284</isbn><isbn>9780780385283</isbn><abstract>pMOSFETs negatively biased under operating conditions and subjected to high temperature experience a progressive threshold voltage shift (Negative Bias Temperature Instability, NBTI). NBTI depends on several technological factors. We are showing in this paper a comprehensive study which discuss the NBTI dependence on channel length and channel width: overall, devices with shorter and wider channel are the most sensitive to NBTI. We are also discussing the strong sensitivity of NBTI to latent plasma induced damage: this makes NBTI a reliable index of latent damage.</abstract><pub>IEEE</pub><doi>10.1109/ICICDT.2004.1309971</doi><tpages>4</tpages></addata></record> |
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| language | eng ; jpn |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | MOSFETs Negative bias temperature instability Niobium compounds Plasma devices Plasma temperature Stress Temperature dependence Temperature sensors Threshold voltage Titanium compounds |
| title | Effect of channel width, length, and latent damage on NBTI |
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