Monitoring and preventing arc-induced wafer damage in 300mm manufacturing

Arcing between the plasma and the wafer, kit, or target in PVD processes can cause significant wafer damage and foreign material contamination which limits wafer yield. Monitoring the plasma and quickly detecting this arcing phenomena is critical to ensuring that today's PVD processes run optim...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Parker, J., Reath, M., Krauss, A.F., Campbell, W.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Atherosclerosis Chemical vapor deposition Contamination Electric breakdown Manufacturing processes Monitoring Plasma materials processing Plasma properties Semiconductor device manufacture Semiconductor materials
Online-Zugang:	Volltext bestellen
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