Lateral trench electrode power MOS including a local doping region for power electronic system

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET" (Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kim, D.J., Sung, M.Y., Kang, E.G., Chung, H.S., Nahm, E.S., Lee, D.J., Lee, J.H.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Breakdown voltage Doping Electric variables Electrodes Electrons Fabrication MOSFET circuits Power electronics Power MOSFET Threshold voltage
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