Integrated series-interconnected thin-film Si solar cells with 6 V and 12 V output voltage
A concept to increase the output voltage of solar cells using monolithically series-interconnected thin-film Si solar cells on SOI-wafers is presented. By using this concept 10 or 20 single cells (active areas: 0.4 cm/sup 2/ or 0.2 cm/sup 2/) have been processed on mono-x-Si SOI-wafers with a 15 /sp...
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| creator | Peters, S. Leihkauf, R. Wagemann, H.G. |
| description | A concept to increase the output voltage of solar cells using monolithically series-interconnected thin-film Si solar cells on SOI-wafers is presented. By using this concept 10 or 20 single cells (active areas: 0.4 cm/sup 2/ or 0.2 cm/sup 2/) have been processed on mono-x-Si SOI-wafers with a 15 /spl mu/m thick device layer. Two different kinds of SOI-material [/spl rho//sub p(Si active)/=(2...3) /spl Omega/cm and (0.1...0.9) /spl Omega/cm] have been used. A special technique permits the insulation of single cells on the burried oxide. Under insolation AM1.5G (100 mW/cm/sup 2/) open circuit voltage of 6.2 V (10 interconnected cells) and 12.6 V (20 interconnected cells), short circuit current densities of 23 mA/cm/sup 2/ and efficiencies up to 11% have been achieved. Measured IQE and emitter doping evaluation can be used to increase the efficiency furthermore. |
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By using this concept 10 or 20 single cells (active areas: 0.4 cm/sup 2/ or 0.2 cm/sup 2/) have been processed on mono-x-Si SOI-wafers with a 15 /spl mu/m thick device layer. Two different kinds of SOI-material [/spl rho//sub p(Si active)/=(2...3) /spl Omega/cm and (0.1...0.9) /spl Omega/cm] have been used. A special technique permits the insulation of single cells on the burried oxide. Under insolation AM1.5G (100 mW/cm/sup 2/) open circuit voltage of 6.2 V (10 interconnected cells) and 12.6 V (20 interconnected cells), short circuit current densities of 23 mA/cm/sup 2/ and efficiencies up to 11% have been achieved. Measured IQE and emitter doping evaluation can be used to increase the efficiency furthermore.</description><identifier>ISBN: 4990181603</identifier><identifier>ISBN: 9784990181604</identifier><language>eng</language><publisher>IEEE</publisher><subject>Crystallization ; Doping ; Insulation ; Integrated circuit interconnections ; Integrated circuit reliability ; Photovoltaic cells ; Semiconductor thin films ; Silicon ; Substrates ; Voltage</subject><ispartof>3rd World Conference onPhotovoltaic Energy Conversion, 2003. 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Proceedings of</title><addtitle>WCPEC</addtitle><description>A concept to increase the output voltage of solar cells using monolithically series-interconnected thin-film Si solar cells on SOI-wafers is presented. By using this concept 10 or 20 single cells (active areas: 0.4 cm/sup 2/ or 0.2 cm/sup 2/) have been processed on mono-x-Si SOI-wafers with a 15 /spl mu/m thick device layer. Two different kinds of SOI-material [/spl rho//sub p(Si active)/=(2...3) /spl Omega/cm and (0.1...0.9) /spl Omega/cm] have been used. A special technique permits the insulation of single cells on the burried oxide. Under insolation AM1.5G (100 mW/cm/sup 2/) open circuit voltage of 6.2 V (10 interconnected cells) and 12.6 V (20 interconnected cells), short circuit current densities of 23 mA/cm/sup 2/ and efficiencies up to 11% have been achieved. Measured IQE and emitter doping evaluation can be used to increase the efficiency furthermore.</description><subject>Crystallization</subject><subject>Doping</subject><subject>Insulation</subject><subject>Integrated circuit interconnections</subject><subject>Integrated circuit reliability</subject><subject>Photovoltaic cells</subject><subject>Semiconductor thin films</subject><subject>Silicon</subject><subject>Substrates</subject><subject>Voltage</subject><isbn>4990181603</isbn><isbn>9784990181604</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2003</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9ib0KwjAURgMi-NcncLkvUEhNrc0sis6Kg0sJ7W17JU1Kkiq-vRWc_ZZzON-ELVIpeZInGRczFnn_4OOE3Oa7dM7uZxOwcSpgBR4doY9pLK60xmD5raElE9ekO7gQeKuVgxK19vCi0EIGN1CmgmQzih1CPwR4Wh1Ugys2rZX2GP24ZOvj4bo_xYSIRe-oU-5dJIJnGy7F__cD64A7_Q</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>Peters, S.</creator><creator>Leihkauf, R.</creator><creator>Wagemann, H.G.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2003</creationdate><title>Integrated series-interconnected thin-film Si solar cells with 6 V and 12 V output voltage</title><author>Peters, S. ; Leihkauf, R. ; Wagemann, H.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_13062093</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Crystallization</topic><topic>Doping</topic><topic>Insulation</topic><topic>Integrated circuit interconnections</topic><topic>Integrated circuit reliability</topic><topic>Photovoltaic cells</topic><topic>Semiconductor thin films</topic><topic>Silicon</topic><topic>Substrates</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Peters, S.</creatorcontrib><creatorcontrib>Leihkauf, R.</creatorcontrib><creatorcontrib>Wagemann, H.G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Peters, S.</au><au>Leihkauf, R.</au><au>Wagemann, H.G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Integrated series-interconnected thin-film Si solar cells with 6 V and 12 V output voltage</atitle><btitle>3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of</btitle><stitle>WCPEC</stitle><date>2003</date><risdate>2003</risdate><volume>2</volume><spage>1496</spage><epage>1499 Vol.2</epage><pages>1496-1499 Vol.2</pages><isbn>4990181603</isbn><isbn>9784990181604</isbn><abstract>A concept to increase the output voltage of solar cells using monolithically series-interconnected thin-film Si solar cells on SOI-wafers is presented. By using this concept 10 or 20 single cells (active areas: 0.4 cm/sup 2/ or 0.2 cm/sup 2/) have been processed on mono-x-Si SOI-wafers with a 15 /spl mu/m thick device layer. Two different kinds of SOI-material [/spl rho//sub p(Si active)/=(2...3) /spl Omega/cm and (0.1...0.9) /spl Omega/cm] have been used. A special technique permits the insulation of single cells on the burried oxide. Under insolation AM1.5G (100 mW/cm/sup 2/) open circuit voltage of 6.2 V (10 interconnected cells) and 12.6 V (20 interconnected cells), short circuit current densities of 23 mA/cm/sup 2/ and efficiencies up to 11% have been achieved. Measured IQE and emitter doping evaluation can be used to increase the efficiency furthermore.</abstract><pub>IEEE</pub></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Crystallization Doping Insulation Integrated circuit interconnections Integrated circuit reliability Photovoltaic cells Semiconductor thin films Silicon Substrates Voltage |
| title | Integrated series-interconnected thin-film Si solar cells with 6 V and 12 V output voltage |
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