GaInNAs for multi-junction tandem solar cells
We have investigated the effect of atomic H irradiation on the growth of GaInNAs/GaAs films in hydrogen-assisted RF-molecular beam epitaxy (RF-MBE) from the viewpoint of growth dynamics and material quality. The crystal quality of GaInNAs films was characterized by using X-ray diffraction (XRD) and...
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| creator | Ohmae, A. Shimizu, Y. Okada, Y. |
| description | We have investigated the effect of atomic H irradiation on the growth of GaInNAs/GaAs films in hydrogen-assisted RF-molecular beam epitaxy (RF-MBE) from the viewpoint of growth dynamics and material quality. The crystal quality of GaInNAs films was characterized by using X-ray diffraction (XRD) and photoluminescence (PL), and the surface morphology was characterized by using atomic force microscope (AFM). The atomic H irradiation during the growth of GaInNAs was found to be very effective in improving the overall quality of epilayers. Further, we found that atomic H irradiation acts to suppress 3-dimensional islanded growth, and promote a 2-dimensional growth mode. Atomic H was also effective in passivating the active recombination defect centers. An improved PL characteristics was observed for GaInNAs grown on GaAs with atomic H at /spl sim/1.0 eV, measured at 77 K. In addition, we have also investigated the growth of GaInNAs films on Ge substrates, which is attractive for use in multi-junction III-V tandem solar cells. |
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The crystal quality of GaInNAs films was characterized by using X-ray diffraction (XRD) and photoluminescence (PL), and the surface morphology was characterized by using atomic force microscope (AFM). The atomic H irradiation during the growth of GaInNAs was found to be very effective in improving the overall quality of epilayers. Further, we found that atomic H irradiation acts to suppress 3-dimensional islanded growth, and promote a 2-dimensional growth mode. Atomic H was also effective in passivating the active recombination defect centers. An improved PL characteristics was observed for GaInNAs grown on GaAs with atomic H at /spl sim/1.0 eV, measured at 77 K. In addition, we have also investigated the growth of GaInNAs films on Ge substrates, which is attractive for use in multi-junction III-V tandem solar cells.</description><identifier>ISBN: 4990181603</identifier><identifier>ISBN: 9784990181604</identifier><language>eng</language><publisher>IEEE</publisher><subject>Atomic beams ; Atomic force microscopy ; Atomic layer deposition ; Atomic measurements ; Crystalline materials ; Epitaxial growth ; Gallium arsenide ; Molecular beam epitaxial growth ; Photovoltaic cells ; X-ray diffraction</subject><ispartof>3rd World Conference onPhotovoltaic Energy Conversion, 2003. 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Proceedings of</title><addtitle>WCPEC</addtitle><description>We have investigated the effect of atomic H irradiation on the growth of GaInNAs/GaAs films in hydrogen-assisted RF-molecular beam epitaxy (RF-MBE) from the viewpoint of growth dynamics and material quality. The crystal quality of GaInNAs films was characterized by using X-ray diffraction (XRD) and photoluminescence (PL), and the surface morphology was characterized by using atomic force microscope (AFM). The atomic H irradiation during the growth of GaInNAs was found to be very effective in improving the overall quality of epilayers. Further, we found that atomic H irradiation acts to suppress 3-dimensional islanded growth, and promote a 2-dimensional growth mode. Atomic H was also effective in passivating the active recombination defect centers. An improved PL characteristics was observed for GaInNAs grown on GaAs with atomic H at /spl sim/1.0 eV, measured at 77 K. In addition, we have also investigated the growth of GaInNAs films on Ge substrates, which is attractive for use in multi-junction III-V tandem solar cells.</description><subject>Atomic beams</subject><subject>Atomic force microscopy</subject><subject>Atomic layer deposition</subject><subject>Atomic measurements</subject><subject>Crystalline materials</subject><subject>Epitaxial growth</subject><subject>Gallium arsenide</subject><subject>Molecular beam epitaxial growth</subject><subject>Photovoltaic cells</subject><subject>X-ray diffraction</subject><isbn>4990181603</isbn><isbn>9784990181604</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2003</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpjZuAysbQ0MLQwNDMw5mDgLS7OMgACY0tTC3MTTgZd90TPPD_HYoW0_CKF3NKckkzdrNK85JLM_DyFksS8lNRcheL8nMQiheTUnJxiHgbWtMSc4lReKM3NIO3mGuLsoZuZmpoaX1CUmZtYVBlvaGxgamxuaIxfFgCf-SwC</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>Ohmae, A.</creator><creator>Shimizu, Y.</creator><creator>Okada, Y.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2003</creationdate><title>GaInNAs for multi-junction tandem solar cells</title><author>Ohmae, A. ; Shimizu, Y. ; Okada, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_13053713</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Atomic beams</topic><topic>Atomic force microscopy</topic><topic>Atomic layer deposition</topic><topic>Atomic measurements</topic><topic>Crystalline materials</topic><topic>Epitaxial growth</topic><topic>Gallium arsenide</topic><topic>Molecular beam epitaxial growth</topic><topic>Photovoltaic cells</topic><topic>X-ray diffraction</topic><toplevel>online_resources</toplevel><creatorcontrib>Ohmae, A.</creatorcontrib><creatorcontrib>Shimizu, Y.</creatorcontrib><creatorcontrib>Okada, Y.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ohmae, A.</au><au>Shimizu, Y.</au><au>Okada, Y.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>GaInNAs for multi-junction tandem solar cells</atitle><btitle>3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of</btitle><stitle>WCPEC</stitle><date>2003</date><risdate>2003</risdate><volume>1</volume><spage>673</spage><epage>676 Vol.1</epage><pages>673-676 Vol.1</pages><isbn>4990181603</isbn><isbn>9784990181604</isbn><abstract>We have investigated the effect of atomic H irradiation on the growth of GaInNAs/GaAs films in hydrogen-assisted RF-molecular beam epitaxy (RF-MBE) from the viewpoint of growth dynamics and material quality. The crystal quality of GaInNAs films was characterized by using X-ray diffraction (XRD) and photoluminescence (PL), and the surface morphology was characterized by using atomic force microscope (AFM). The atomic H irradiation during the growth of GaInNAs was found to be very effective in improving the overall quality of epilayers. Further, we found that atomic H irradiation acts to suppress 3-dimensional islanded growth, and promote a 2-dimensional growth mode. Atomic H was also effective in passivating the active recombination defect centers. An improved PL characteristics was observed for GaInNAs grown on GaAs with atomic H at /spl sim/1.0 eV, measured at 77 K. In addition, we have also investigated the growth of GaInNAs films on Ge substrates, which is attractive for use in multi-junction III-V tandem solar cells.</abstract><pub>IEEE</pub></addata></record> |
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| subjects | Atomic beams Atomic force microscopy Atomic layer deposition Atomic measurements Crystalline materials Epitaxial growth Gallium arsenide Molecular beam epitaxial growth Photovoltaic cells X-ray diffraction |
| title | GaInNAs for multi-junction tandem solar cells |
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