The science and applications of relaxed semiconductor alloys on conventional substrates
Progress in creating thin film relaxed lattice constant semiconductors on conventional substrates has recently led to progress in a variety of electronic and optoelectronic devices. By understanding the relationship between misfit and threading dislocations, and the relationship between dislocation...
Gespeichert in:
Hauptverfasser: | , , , , , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 592 Vol.1 |
---|---|
container_issue | |
container_start_page | 587 |
container_title | |
container_volume | 1 |
creator | Fitzgerald, E.A. Groenart, M.E. Pitera, A. Lee, M.L. Yang, V. Carlin, J.A. Leitz, C.W. Andre, C.L. Ringel, S.A. |
description | Progress in creating thin film relaxed lattice constant semiconductors on conventional substrates has recently led to progress in a variety of electronic and optoelectronic devices. By understanding the relationship between misfit and threading dislocations, and the relationship between dislocation nucleation and threading dislocation propagation, graded composition buffer layers can be used to relieve lattice mismatch and retain surface layers with great perfection. A particularly interesting system is the relaxed Si/sub 1-x/Ge/sub x//Si system, which can host a variety of high performance CMOS devices as well as allow for the integration of GaAs with Si. Optical links, solar cells, and more recently, continuous wave room temperature lasers have been created on GaAs/Ge/SiGe/Si. Commercialization of relaxed Si/sub 1-x/Ge/sub x//Si materials will likely occur through the Si CMOS end market, creating a supply of low cost SiGe virtual substrates for other application areas, including solar cells. |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1305351</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1305351</ieee_id><sourcerecordid>1305351</sourcerecordid><originalsourceid>FETCH-ieee_primary_13053513</originalsourceid><addsrcrecordid>eNp9ik0KwjAQRgMi-NcTuJkLCAlptV2L4gEKLmVMpxhJk5JJxd7eCq79Ng_e-2ZilVeVVKXaS70QGfNTTtNVUR7ypbjWDwI2lrwhQN8A9r2zBpMNniG0EMnhmxpg6qwJvhlMChHQuTBO3cPkXuS_d3TAw51TxES8EfMWHVP241psz6f6eNlZIrr10XYYx5vSstCF0v_rB8_uPPA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>The science and applications of relaxed semiconductor alloys on conventional substrates</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Fitzgerald, E.A. ; Groenart, M.E. ; Pitera, A. ; Lee, M.L. ; Yang, V. ; Carlin, J.A. ; Leitz, C.W. ; Andre, C.L. ; Ringel, S.A.</creator><creatorcontrib>Fitzgerald, E.A. ; Groenart, M.E. ; Pitera, A. ; Lee, M.L. ; Yang, V. ; Carlin, J.A. ; Leitz, C.W. ; Andre, C.L. ; Ringel, S.A.</creatorcontrib><description>Progress in creating thin film relaxed lattice constant semiconductors on conventional substrates has recently led to progress in a variety of electronic and optoelectronic devices. By understanding the relationship between misfit and threading dislocations, and the relationship between dislocation nucleation and threading dislocation propagation, graded composition buffer layers can be used to relieve lattice mismatch and retain surface layers with great perfection. A particularly interesting system is the relaxed Si/sub 1-x/Ge/sub x//Si system, which can host a variety of high performance CMOS devices as well as allow for the integration of GaAs with Si. Optical links, solar cells, and more recently, continuous wave room temperature lasers have been created on GaAs/Ge/SiGe/Si. Commercialization of relaxed Si/sub 1-x/Ge/sub x//Si materials will likely occur through the Si CMOS end market, creating a supply of low cost SiGe virtual substrates for other application areas, including solar cells.</description><identifier>ISBN: 4990181603</identifier><identifier>ISBN: 9784990181604</identifier><language>eng</language><publisher>IEEE</publisher><subject>Consumer electronics ; Gallium arsenide ; Germanium silicon alloys ; Lattices ; Photovoltaic cells ; Semiconductor materials ; Semiconductor thin films ; Silicon germanium ; Substrates ; Thin film devices</subject><ispartof>3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of, 2003, Vol.1, p.587-592 Vol.1</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1305351$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1305351$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Fitzgerald, E.A.</creatorcontrib><creatorcontrib>Groenart, M.E.</creatorcontrib><creatorcontrib>Pitera, A.</creatorcontrib><creatorcontrib>Lee, M.L.</creatorcontrib><creatorcontrib>Yang, V.</creatorcontrib><creatorcontrib>Carlin, J.A.</creatorcontrib><creatorcontrib>Leitz, C.W.</creatorcontrib><creatorcontrib>Andre, C.L.</creatorcontrib><creatorcontrib>Ringel, S.A.</creatorcontrib><title>The science and applications of relaxed semiconductor alloys on conventional substrates</title><title>3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of</title><addtitle>WCPEC</addtitle><description>Progress in creating thin film relaxed lattice constant semiconductors on conventional substrates has recently led to progress in a variety of electronic and optoelectronic devices. By understanding the relationship between misfit and threading dislocations, and the relationship between dislocation nucleation and threading dislocation propagation, graded composition buffer layers can be used to relieve lattice mismatch and retain surface layers with great perfection. A particularly interesting system is the relaxed Si/sub 1-x/Ge/sub x//Si system, which can host a variety of high performance CMOS devices as well as allow for the integration of GaAs with Si. Optical links, solar cells, and more recently, continuous wave room temperature lasers have been created on GaAs/Ge/SiGe/Si. Commercialization of relaxed Si/sub 1-x/Ge/sub x//Si materials will likely occur through the Si CMOS end market, creating a supply of low cost SiGe virtual substrates for other application areas, including solar cells.</description><subject>Consumer electronics</subject><subject>Gallium arsenide</subject><subject>Germanium silicon alloys</subject><subject>Lattices</subject><subject>Photovoltaic cells</subject><subject>Semiconductor materials</subject><subject>Semiconductor thin films</subject><subject>Silicon germanium</subject><subject>Substrates</subject><subject>Thin film devices</subject><isbn>4990181603</isbn><isbn>9784990181604</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2003</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9ik0KwjAQRgMi-NcTuJkLCAlptV2L4gEKLmVMpxhJk5JJxd7eCq79Ng_e-2ZilVeVVKXaS70QGfNTTtNVUR7ypbjWDwI2lrwhQN8A9r2zBpMNniG0EMnhmxpg6qwJvhlMChHQuTBO3cPkXuS_d3TAw51TxES8EfMWHVP241psz6f6eNlZIrr10XYYx5vSstCF0v_rB8_uPPA</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>Fitzgerald, E.A.</creator><creator>Groenart, M.E.</creator><creator>Pitera, A.</creator><creator>Lee, M.L.</creator><creator>Yang, V.</creator><creator>Carlin, J.A.</creator><creator>Leitz, C.W.</creator><creator>Andre, C.L.</creator><creator>Ringel, S.A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2003</creationdate><title>The science and applications of relaxed semiconductor alloys on conventional substrates</title><author>Fitzgerald, E.A. ; Groenart, M.E. ; Pitera, A. ; Lee, M.L. ; Yang, V. ; Carlin, J.A. ; Leitz, C.W. ; Andre, C.L. ; Ringel, S.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_13053513</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Consumer electronics</topic><topic>Gallium arsenide</topic><topic>Germanium silicon alloys</topic><topic>Lattices</topic><topic>Photovoltaic cells</topic><topic>Semiconductor materials</topic><topic>Semiconductor thin films</topic><topic>Silicon germanium</topic><topic>Substrates</topic><topic>Thin film devices</topic><toplevel>online_resources</toplevel><creatorcontrib>Fitzgerald, E.A.</creatorcontrib><creatorcontrib>Groenart, M.E.</creatorcontrib><creatorcontrib>Pitera, A.</creatorcontrib><creatorcontrib>Lee, M.L.</creatorcontrib><creatorcontrib>Yang, V.</creatorcontrib><creatorcontrib>Carlin, J.A.</creatorcontrib><creatorcontrib>Leitz, C.W.</creatorcontrib><creatorcontrib>Andre, C.L.</creatorcontrib><creatorcontrib>Ringel, S.A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fitzgerald, E.A.</au><au>Groenart, M.E.</au><au>Pitera, A.</au><au>Lee, M.L.</au><au>Yang, V.</au><au>Carlin, J.A.</au><au>Leitz, C.W.</au><au>Andre, C.L.</au><au>Ringel, S.A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The science and applications of relaxed semiconductor alloys on conventional substrates</atitle><btitle>3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of</btitle><stitle>WCPEC</stitle><date>2003</date><risdate>2003</risdate><volume>1</volume><spage>587</spage><epage>592 Vol.1</epage><pages>587-592 Vol.1</pages><isbn>4990181603</isbn><isbn>9784990181604</isbn><abstract>Progress in creating thin film relaxed lattice constant semiconductors on conventional substrates has recently led to progress in a variety of electronic and optoelectronic devices. By understanding the relationship between misfit and threading dislocations, and the relationship between dislocation nucleation and threading dislocation propagation, graded composition buffer layers can be used to relieve lattice mismatch and retain surface layers with great perfection. A particularly interesting system is the relaxed Si/sub 1-x/Ge/sub x//Si system, which can host a variety of high performance CMOS devices as well as allow for the integration of GaAs with Si. Optical links, solar cells, and more recently, continuous wave room temperature lasers have been created on GaAs/Ge/SiGe/Si. Commercialization of relaxed Si/sub 1-x/Ge/sub x//Si materials will likely occur through the Si CMOS end market, creating a supply of low cost SiGe virtual substrates for other application areas, including solar cells.</abstract><pub>IEEE</pub></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISBN: 4990181603 |
ispartof | 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of, 2003, Vol.1, p.587-592 Vol.1 |
issn | |
language | eng |
recordid | cdi_ieee_primary_1305351 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Consumer electronics Gallium arsenide Germanium silicon alloys Lattices Photovoltaic cells Semiconductor materials Semiconductor thin films Silicon germanium Substrates Thin film devices |
title | The science and applications of relaxed semiconductor alloys on conventional substrates |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T01%3A56%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=The%20science%20and%20applications%20of%20relaxed%20semiconductor%20alloys%20on%20conventional%20substrates&rft.btitle=3rd%20World%20Conference%20onPhotovoltaic%20Energy%20Conversion,%202003.%20Proceedings%20of&rft.au=Fitzgerald,%20E.A.&rft.date=2003&rft.volume=1&rft.spage=587&rft.epage=592%20Vol.1&rft.pages=587-592%20Vol.1&rft.isbn=4990181603&rft.isbn_list=9784990181604&rft_id=info:doi/&rft_dat=%3Cieee_6IE%3E1305351%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1305351&rfr_iscdi=true |