Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs
A possible mechanism behind the predominant source-side gate oxide degradation in channel hot-electron (CHE)-stressed deep submicrometer n-MOSFETs is presented. The role of a nonlocal hot-electron injection mechanism, arising possibly from carrier-to-carrier interaction and/or impact ionization feed...
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Veröffentlicht in: | IEEE electron device letters 2004-06, Vol.25 (6), p.417-419 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A possible mechanism behind the predominant source-side gate oxide degradation in channel hot-electron (CHE)-stressed deep submicrometer n-MOSFETs is presented. The role of a nonlocal hot-electron injection mechanism, arising possibly from carrier-to-carrier interaction and/or impact ionization feedback, is emphasized. The latter effect is prominently revealed through a systematic stress scheme that employs a reverse substrate bias. Oxide degradation behaviour is shown to be consistent with the anode electron-energy model. The more severe source-side oxide degradation may be attributed to nonlocally injected tertiary electrons possessing greater available energy on arrival at the anode (gate), as a result of a coupled heating process. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2004.828566 |