Design of a fully integrated high linearity dual-band CMOS LNA

Design of a fully integrated high linearity dual-band CMOS LNA

A fully-integrated dual-band LNA ( Low Noise Amplifier) with high linearity is presented in this thesis. Designed and implemented in 0.25 /spl mu/m mixed-signal CMOS process, the LNA simultaneously delivered narrow-band gain and matching at 2.45GHz and 5.25GHz. The LNA exhibits input matching with S...

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Bibliographische Detailangaben
Hauptverfasser: Jou, C.F., Kuo-Hua Cheng, Pang-Ruci Huang, Mei-Chien Chen
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Circuits
CMOS technology
Dual band
Impedance matching
Linearity
Oscillators
Radio frequency
Receivers
Transceivers
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Beschreibung
Zusammenfassung:A fully-integrated dual-band LNA ( Low Noise Amplifier) with high linearity is presented in this thesis. Designed and implemented in 0.25 /spl mu/m mixed-signal CMOS process, the LNA simultaneously delivered narrow-band gain and matching at 2.45GHz and 5.25GHz. The LNA exhibits input matching with S/sub 11/ of -20.48dB at 2.45GHz and -16.6dB at 5.25GHz. And it achieves small-signal gain of 5.78dB and 3.24dB, noise figure 4.7dB and 5.69dB, and IIP/sub 3/ 7dBm and 17dBm.
DOI:10.1109/ICECS.2003.1301672