Low-frequency noise in heterojunction FETs with low-temperature buffer
Low-frequency noise was measured on heterojunction FETs grown on low-temperature buffer and superlattice buffer layers. A distinct generation-recombination noise source with an activation energy of 0.70 eV was observed in devices built on a low-temperature buffer. Both structures showed a trap with...
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| Veröffentlicht in: | IEEE transactions on electron devices 1992-05, Vol.39 (5), p.1070-1074 |
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| container_end_page | 1074 |
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| container_issue | 5 |
| container_start_page | 1070 |
| container_title | IEEE transactions on electron devices |
| container_volume | 39 |
| creator | Tehrani, S. van Rheenen, A.D. Hoogstra, M.M. Curless, J.A. Peffley, M.S. |
| description | Low-frequency noise was measured on heterojunction FETs grown on low-temperature buffer and superlattice buffer layers. A distinct generation-recombination noise source with an activation energy of 0.70 eV was observed in devices built on a low-temperature buffer. Both structures showed a trap with an activation energy ( approximately 0.50 eV) that has a gate-to-source voltage dependence and is believed to be due to interactions between electrons in the channel and traps in the AlGaAs supply layer. Computer simulations of the position of the energy levels as a function of the gate voltage support this idea. A trap due to DX centers with an activation energy of approximately 0.30 eV in AlGaAs was also observed in both devices.< > |
| doi_str_mv | 10.1109/16.129084 |
| format | Article |
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A distinct generation-recombination noise source with an activation energy of 0.70 eV was observed in devices built on a low-temperature buffer. Both structures showed a trap with an activation energy ( approximately 0.50 eV) that has a gate-to-source voltage dependence and is believed to be due to interactions between electrons in the channel and traps in the AlGaAs supply layer. Computer simulations of the position of the energy levels as a function of the gate voltage support this idea. A trap due to DX centers with an activation energy of approximately 0.30 eV in AlGaAs was also observed in both devices.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.129084</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Buffer layers ; Computer simulation ; Electron traps ; Electronics ; Exact sciences and technology ; FETs ; Heterojunctions ; Low-frequency noise ; Noise generators ; Noise measurement ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Superlattices ; Transistors ; Voltage</subject><ispartof>IEEE transactions on electron devices, 1992-05, Vol.39 (5), p.1070-1074</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-a997a1791c441e81e1352887d0b12ba6bd9e201ddf3cb3e3ddd1b2bfaa47ff3d3</citedby><cites>FETCH-LOGICAL-c337t-a997a1791c441e81e1352887d0b12ba6bd9e201ddf3cb3e3ddd1b2bfaa47ff3d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/129084$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/129084$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5298446$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tehrani, S.</creatorcontrib><creatorcontrib>van Rheenen, A.D.</creatorcontrib><creatorcontrib>Hoogstra, M.M.</creatorcontrib><creatorcontrib>Curless, J.A.</creatorcontrib><creatorcontrib>Peffley, M.S.</creatorcontrib><title>Low-frequency noise in heterojunction FETs with low-temperature buffer</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Low-frequency noise was measured on heterojunction FETs grown on low-temperature buffer and superlattice buffer layers. A distinct generation-recombination noise source with an activation energy of 0.70 eV was observed in devices built on a low-temperature buffer. Both structures showed a trap with an activation energy ( approximately 0.50 eV) that has a gate-to-source voltage dependence and is believed to be due to interactions between electrons in the channel and traps in the AlGaAs supply layer. Computer simulations of the position of the energy levels as a function of the gate voltage support this idea. A trap due to DX centers with an activation energy of approximately 0.30 eV in AlGaAs was also observed in both devices.< ></description><subject>Applied sciences</subject><subject>Buffer layers</subject><subject>Computer simulation</subject><subject>Electron traps</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Heterojunctions</subject><subject>Low-frequency noise</subject><subject>Noise generators</subject><subject>Noise measurement</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Superlattices</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNqNkMFLwzAUxoMoOKcHr556EMFDZ16SNs1RhlNh4EXPJU1eWEbXzqRl7L83UtGrp8cHv-_H4yPkGugCgKoHKBfAFK3ECZlBUchclaI8JTNKocoVr_g5uYhxm2IpBJuR1bo_5C7g54idOWZd7yNmvss2OGDot2NnBt932erpPWYHP2yyNvED7vYY9DAGzJrROQyX5MzpNuLVz52Tj1RZvuTrt-fX5eM6N5zLIddKSQ1SgRECsAIEXrCqkpY2wBpdNlYho2Ct46bhyK210LDGaS2kc9zyObmbvPvQp5fjUO98NNi2usN-jHWSUUYl_QfIJVQlS-D9BJrQxxjQ1fvgdzoca6D196Q1lPU0aWJvf6Q6Gt26oDvj42-hYKoSokzYzYR5RPzTTY4vPRF-Kw</recordid><startdate>19920501</startdate><enddate>19920501</enddate><creator>Tehrani, S.</creator><creator>van Rheenen, A.D.</creator><creator>Hoogstra, M.M.</creator><creator>Curless, J.A.</creator><creator>Peffley, M.S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>19920501</creationdate><title>Low-frequency noise in heterojunction FETs with low-temperature buffer</title><author>Tehrani, S. ; van Rheenen, A.D. ; Hoogstra, M.M. ; Curless, J.A. ; Peffley, M.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-a997a1791c441e81e1352887d0b12ba6bd9e201ddf3cb3e3ddd1b2bfaa47ff3d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Applied sciences</topic><topic>Buffer layers</topic><topic>Computer simulation</topic><topic>Electron traps</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>Heterojunctions</topic><topic>Low-frequency noise</topic><topic>Noise generators</topic><topic>Noise measurement</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Superlattices</topic><topic>Transistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tehrani, S.</creatorcontrib><creatorcontrib>van Rheenen, A.D.</creatorcontrib><creatorcontrib>Hoogstra, M.M.</creatorcontrib><creatorcontrib>Curless, J.A.</creatorcontrib><creatorcontrib>Peffley, M.S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tehrani, S.</au><au>van Rheenen, A.D.</au><au>Hoogstra, M.M.</au><au>Curless, J.A.</au><au>Peffley, M.S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-frequency noise in heterojunction FETs with low-temperature buffer</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1992-05-01</date><risdate>1992</risdate><volume>39</volume><issue>5</issue><spage>1070</spage><epage>1074</epage><pages>1070-1074</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Low-frequency noise was measured on heterojunction FETs grown on low-temperature buffer and superlattice buffer layers. A distinct generation-recombination noise source with an activation energy of 0.70 eV was observed in devices built on a low-temperature buffer. Both structures showed a trap with an activation energy ( approximately 0.50 eV) that has a gate-to-source voltage dependence and is believed to be due to interactions between electrons in the channel and traps in the AlGaAs supply layer. Computer simulations of the position of the energy levels as a function of the gate voltage support this idea. A trap due to DX centers with an activation energy of approximately 0.30 eV in AlGaAs was also observed in both devices.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.129084</doi><tpages>5</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1992-05, Vol.39 (5), p.1070-1074 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_129084 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Buffer layers Computer simulation Electron traps Electronics Exact sciences and technology FETs Heterojunctions Low-frequency noise Noise generators Noise measurement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Superlattices Transistors Voltage |
| title | Low-frequency noise in heterojunction FETs with low-temperature buffer |
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