Extended Oxide-Trap extraction method to low frequencies for irradiated MOS transistors

We present an extraction of the OTCP (Oxide-Trap based on Charge-Pumping method from high frequencies (HF) to low frequencies (LF). Thus using the LF-OTCP method, the interface-trap and border-trap are simultaneously involved in charge pumping (CP) current (I/sub cp/) measurements. We have found tha...

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Bibliographische Detailangaben

Hauptverfasser:	Djezzar, B., Smatti, A., Oussalah, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge measurement Charge pumps Current measurement Frequency measurement Hafnium Laboratories Microelectronics MOSFETs Threshold voltage Tunneling
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