New expression for base transit time in an exponentially doped base bipolar transistor for all levels of injection

A new and compact formula for the base transit time, /spl tau//sub b/, of a modern high speed npn bipolar transistor with exponential base doping profile is derived. The present treatment includes doping dependence of mobility, bandgap narrowing effect, high injection effect and carrier velocity sat...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Rahman Khan, M.Z., Shahidul Hassan, M.M., Rahman, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bipolar transistors Charge carrier processes Current density Doping profiles Electron mobility Frequency Integral equations Kirk field collapse effect Photonic band gap Velocity control
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!