New expression for base transit time in an exponentially doped base bipolar transistor for all levels of injection
A new and compact formula for the base transit time, /spl tau//sub b/, of a modern high speed npn bipolar transistor with exponential base doping profile is derived. The present treatment includes doping dependence of mobility, bandgap narrowing effect, high injection effect and carrier velocity sat...
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| creator | Rahman Khan, M.Z. Shahidul Hassan, M.M. Rahman, T. |
| description | A new and compact formula for the base transit time, /spl tau//sub b/, of a modern high speed npn bipolar transistor with exponential base doping profile is derived. The present treatment includes doping dependence of mobility, bandgap narrowing effect, high injection effect and carrier velocity saturation at the base edge of the collector-base junction The derivation is not based on the charge control concept, but shows how current and charge depend on minority carrier concentration, which in turn are function of junction voltage. The expression is applicable for arbitrary injection before the onset of Kirk effect and it is simple and straight forward to give insight into device operation. The base transit time calculated analytically is compared with numerical results in order to demonstrate the validity of the assumptions made in deriving the expression. |
| doi_str_mv | 10.1109/ICM.2003.237928 |
| format | Conference Proceeding |
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The present treatment includes doping dependence of mobility, bandgap narrowing effect, high injection effect and carrier velocity saturation at the base edge of the collector-base junction The derivation is not based on the charge control concept, but shows how current and charge depend on minority carrier concentration, which in turn are function of junction voltage. The expression is applicable for arbitrary injection before the onset of Kirk effect and it is simple and straight forward to give insight into device operation. The base transit time calculated analytically is compared with numerical results in order to demonstrate the validity of the assumptions made in deriving the expression.</description><identifier>ISBN: 9770520101</identifier><identifier>ISBN: 9789770520109</identifier><identifier>DOI: 10.1109/ICM.2003.237928</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bipolar transistors ; Charge carrier processes ; Current density ; Doping profiles ; Electron mobility ; Frequency ; Integral equations ; Kirk field collapse effect ; Photonic band gap ; Velocity control</subject><ispartof>Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. 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No.03CH37442)</title><addtitle>ICM</addtitle><description>A new and compact formula for the base transit time, /spl tau//sub b/, of a modern high speed npn bipolar transistor with exponential base doping profile is derived. The present treatment includes doping dependence of mobility, bandgap narrowing effect, high injection effect and carrier velocity saturation at the base edge of the collector-base junction The derivation is not based on the charge control concept, but shows how current and charge depend on minority carrier concentration, which in turn are function of junction voltage. The expression is applicable for arbitrary injection before the onset of Kirk effect and it is simple and straight forward to give insight into device operation. The base transit time calculated analytically is compared with numerical results in order to demonstrate the validity of the assumptions made in deriving the expression.</description><subject>Bipolar transistors</subject><subject>Charge carrier processes</subject><subject>Current density</subject><subject>Doping profiles</subject><subject>Electron mobility</subject><subject>Frequency</subject><subject>Integral equations</subject><subject>Kirk field collapse effect</subject><subject>Photonic band gap</subject><subject>Velocity control</subject><isbn>9770520101</isbn><isbn>9789770520109</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2003</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjT1PwzAURS0hJKB0ZmDxH0h4z45je0QVH5VaWGCunORZcpUmkW0B_fekau9yl3PPZewBoUQE-7RebUsBIEshtRXmit1ZrUEJQMAbtkxpD3OkVZXFWxY_6JfT3xQppTAO3I-RNy4Rz9ENKWSew4F4GLgbTtg40JCD6_sj78aJujPbhGnsXbxsUp4dJ8-M8Z5-qE989LNjT22eP-7ZtXd9ouWlF-z79eVr9V5sPt_Wq-dNEVCrXIja1dLrSlXYNI1H39beE6E0lVIISgO0lSCsuxo668kqA16pGoXqOqOMXLDHszcQ0W6K4eDicYfCaCO0_Af5C1mh</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>Rahman Khan, M.Z.</creator><creator>Shahidul Hassan, M.M.</creator><creator>Rahman, T.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2003</creationdate><title>New expression for base transit time in an exponentially doped base bipolar transistor for all levels of injection</title><author>Rahman Khan, M.Z. ; Shahidul Hassan, M.M. ; Rahman, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-26a63f74541bbbf1fc6ffee138455105700c42e16d60d9fe9580f556125dd8583</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Bipolar transistors</topic><topic>Charge carrier processes</topic><topic>Current density</topic><topic>Doping profiles</topic><topic>Electron mobility</topic><topic>Frequency</topic><topic>Integral equations</topic><topic>Kirk field collapse effect</topic><topic>Photonic band gap</topic><topic>Velocity control</topic><toplevel>online_resources</toplevel><creatorcontrib>Rahman Khan, M.Z.</creatorcontrib><creatorcontrib>Shahidul Hassan, M.M.</creatorcontrib><creatorcontrib>Rahman, T.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rahman Khan, M.Z.</au><au>Shahidul Hassan, M.M.</au><au>Rahman, T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>New expression for base transit time in an exponentially doped base bipolar transistor for all levels of injection</atitle><btitle>Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442)</btitle><stitle>ICM</stitle><date>2003</date><risdate>2003</risdate><spage>340</spage><epage>343</epage><pages>340-343</pages><isbn>9770520101</isbn><isbn>9789770520109</isbn><abstract>A new and compact formula for the base transit time, /spl tau//sub b/, of a modern high speed npn bipolar transistor with exponential base doping profile is derived. The present treatment includes doping dependence of mobility, bandgap narrowing effect, high injection effect and carrier velocity saturation at the base edge of the collector-base junction The derivation is not based on the charge control concept, but shows how current and charge depend on minority carrier concentration, which in turn are function of junction voltage. The expression is applicable for arbitrary injection before the onset of Kirk effect and it is simple and straight forward to give insight into device operation. The base transit time calculated analytically is compared with numerical results in order to demonstrate the validity of the assumptions made in deriving the expression.</abstract><pub>IEEE</pub><doi>10.1109/ICM.2003.237928</doi><tpages>4</tpages></addata></record> |
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| ispartof | Proceedings of the 12th IEEE International Conference on Fuzzy Systems (Cat. No.03CH37442), 2003, p.340-343 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Bipolar transistors Charge carrier processes Current density Doping profiles Electron mobility Frequency Integral equations Kirk field collapse effect Photonic band gap Velocity control |
| title | New expression for base transit time in an exponentially doped base bipolar transistor for all levels of injection |
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