Iridium oxide as low temperature NO/sub 2/-sensitive material for work function-based gas sensors
This paper presents the results on work function-based NO/sub 2/-sensing properties of iridium-oxide thin films at 130/spl deg/C. Films of 20-nm and 100-nm thickness were deposited on silicon substrates using dc sputtering followed by annealing in oxygen ambient. Sensitivity of these films to differ...
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| Veröffentlicht in: | IEEE sensors journal 2004-04, Vol.4 (2), p.189-194 |
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| creator | Karthigeyan, A. Gupta, R.P. Scharnagl, K. Burgmair, M. Zimmer, M. Sulima, T. Venkataraj, S. Sharma, S.K. Eisele, I. |
| description | This paper presents the results on work function-based NO/sub 2/-sensing properties of iridium-oxide thin films at 130/spl deg/C. Films of 20-nm and 100-nm thickness were deposited on silicon substrates using dc sputtering followed by annealing in oxygen ambient. Sensitivity of these films to different concentrations of NO/sub 2/, H/sub 2/, CO, Cl/sub 2/, and NH/sub 3/ in synthetic air was measured using a Kelvin probe. It was observed that work function of 20-nm-thick iridium-oxide film changed by /spl sim/100 mV on exposure to 5-ppm NO/sub 2/ (German safety limit). Cross sensitivity to other gases (except NH/sub 3/) and interference of humidity was found to be negligibly small. The film was incorporated as a gate electrode in a hybrid suspended gate field effect transistor (HSGFET) structure to examine its suitability in FET-type sensors. The films were characterized using Rutherford backscattering spectroscopy, X-ray diffraction analysis, and scanning electron microscopy to determine their composition, phase, and surface morphology. The results suggest that iridium-oxide film is a promising material for the realization of a FET-based NO/sub 2/ sensor. |
| doi_str_mv | 10.1109/JSEN.2004.823651 |
| format | Article |
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Films of 20-nm and 100-nm thickness were deposited on silicon substrates using dc sputtering followed by annealing in oxygen ambient. Sensitivity of these films to different concentrations of NO/sub 2/, H/sub 2/, CO, Cl/sub 2/, and NH/sub 3/ in synthetic air was measured using a Kelvin probe. It was observed that work function of 20-nm-thick iridium-oxide film changed by /spl sim/100 mV on exposure to 5-ppm NO/sub 2/ (German safety limit). Cross sensitivity to other gases (except NH/sub 3/) and interference of humidity was found to be negligibly small. The film was incorporated as a gate electrode in a hybrid suspended gate field effect transistor (HSGFET) structure to examine its suitability in FET-type sensors. The films were characterized using Rutherford backscattering spectroscopy, X-ray diffraction analysis, and scanning electron microscopy to determine their composition, phase, and surface morphology. The results suggest that iridium-oxide film is a promising material for the realization of a FET-based NO/sub 2/ sensor.</description><identifier>ISSN: 1530-437X</identifier><identifier>EISSN: 1558-1748</identifier><identifier>DOI: 10.1109/JSEN.2004.823651</identifier><identifier>CODEN: ISJEAZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Kelvin ; Probes ; Safety ; Semiconductor films ; Sensor phenomena and characterization ; Silicon ; Sputtering ; Substrates ; Temperature sensors</subject><ispartof>IEEE sensors journal, 2004-04, Vol.4 (2), p.189-194</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1271266$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1271266$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Karthigeyan, A.</creatorcontrib><creatorcontrib>Gupta, R.P.</creatorcontrib><creatorcontrib>Scharnagl, K.</creatorcontrib><creatorcontrib>Burgmair, M.</creatorcontrib><creatorcontrib>Zimmer, M.</creatorcontrib><creatorcontrib>Sulima, T.</creatorcontrib><creatorcontrib>Venkataraj, S.</creatorcontrib><creatorcontrib>Sharma, S.K.</creatorcontrib><creatorcontrib>Eisele, I.</creatorcontrib><title>Iridium oxide as low temperature NO/sub 2/-sensitive material for work function-based gas sensors</title><title>IEEE sensors journal</title><addtitle>JSEN</addtitle><description>This paper presents the results on work function-based NO/sub 2/-sensing properties of iridium-oxide thin films at 130/spl deg/C. Films of 20-nm and 100-nm thickness were deposited on silicon substrates using dc sputtering followed by annealing in oxygen ambient. Sensitivity of these films to different concentrations of NO/sub 2/, H/sub 2/, CO, Cl/sub 2/, and NH/sub 3/ in synthetic air was measured using a Kelvin probe. It was observed that work function of 20-nm-thick iridium-oxide film changed by /spl sim/100 mV on exposure to 5-ppm NO/sub 2/ (German safety limit). Cross sensitivity to other gases (except NH/sub 3/) and interference of humidity was found to be negligibly small. The film was incorporated as a gate electrode in a hybrid suspended gate field effect transistor (HSGFET) structure to examine its suitability in FET-type sensors. The films were characterized using Rutherford backscattering spectroscopy, X-ray diffraction analysis, and scanning electron microscopy to determine their composition, phase, and surface morphology. The results suggest that iridium-oxide film is a promising material for the realization of a FET-based NO/sub 2/ sensor.</description><subject>Annealing</subject><subject>Kelvin</subject><subject>Probes</subject><subject>Safety</subject><subject>Semiconductor films</subject><subject>Sensor phenomena and characterization</subject><subject>Silicon</subject><subject>Sputtering</subject><subject>Substrates</subject><subject>Temperature sensors</subject><issn>1530-437X</issn><issn>1558-1748</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9jMtOwzAQRS1EJcpjj8RmfsCJx3k4XaMiYNEuyoJd5TYTNJDE1dih8PdQiTWre6RzdJW6RZMhmkX-vFmuMmtMmTW2qCs8U3OsqkajK5vzExdGl4V7vVCXMb4bgwtXubnyT8ItTwOEL24JfIQ-HCHRcCDxaRKC1TqP0w5sriONkRN_Egw-kbDvoQsCxyAf0E3jPnEY9c5HauHt9-iUB4nXatb5PtLN316pu4fly_2jZiLaHoQHL99btA5tXRf_2x97-EXO</recordid><startdate>200404</startdate><enddate>200404</enddate><creator>Karthigeyan, A.</creator><creator>Gupta, R.P.</creator><creator>Scharnagl, K.</creator><creator>Burgmair, M.</creator><creator>Zimmer, M.</creator><creator>Sulima, T.</creator><creator>Venkataraj, S.</creator><creator>Sharma, S.K.</creator><creator>Eisele, I.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope></search><sort><creationdate>200404</creationdate><title>Iridium oxide as low temperature NO/sub 2/-sensitive material for work function-based gas sensors</title><author>Karthigeyan, A. ; Gupta, R.P. ; Scharnagl, K. ; Burgmair, M. ; Zimmer, M. ; Sulima, T. ; Venkataraj, S. ; Sharma, S.K. ; Eisele, I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_12712663</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Annealing</topic><topic>Kelvin</topic><topic>Probes</topic><topic>Safety</topic><topic>Semiconductor films</topic><topic>Sensor phenomena and characterization</topic><topic>Silicon</topic><topic>Sputtering</topic><topic>Substrates</topic><topic>Temperature sensors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Karthigeyan, A.</creatorcontrib><creatorcontrib>Gupta, R.P.</creatorcontrib><creatorcontrib>Scharnagl, K.</creatorcontrib><creatorcontrib>Burgmair, M.</creatorcontrib><creatorcontrib>Zimmer, M.</creatorcontrib><creatorcontrib>Sulima, T.</creatorcontrib><creatorcontrib>Venkataraj, S.</creatorcontrib><creatorcontrib>Sharma, S.K.</creatorcontrib><creatorcontrib>Eisele, I.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><jtitle>IEEE sensors journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Karthigeyan, A.</au><au>Gupta, R.P.</au><au>Scharnagl, K.</au><au>Burgmair, M.</au><au>Zimmer, M.</au><au>Sulima, T.</au><au>Venkataraj, S.</au><au>Sharma, S.K.</au><au>Eisele, I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Iridium oxide as low temperature NO/sub 2/-sensitive material for work function-based gas sensors</atitle><jtitle>IEEE sensors journal</jtitle><stitle>JSEN</stitle><date>2004-04</date><risdate>2004</risdate><volume>4</volume><issue>2</issue><spage>189</spage><epage>194</epage><pages>189-194</pages><issn>1530-437X</issn><eissn>1558-1748</eissn><coden>ISJEAZ</coden><abstract>This paper presents the results on work function-based NO/sub 2/-sensing properties of iridium-oxide thin films at 130/spl deg/C. Films of 20-nm and 100-nm thickness were deposited on silicon substrates using dc sputtering followed by annealing in oxygen ambient. Sensitivity of these films to different concentrations of NO/sub 2/, H/sub 2/, CO, Cl/sub 2/, and NH/sub 3/ in synthetic air was measured using a Kelvin probe. It was observed that work function of 20-nm-thick iridium-oxide film changed by /spl sim/100 mV on exposure to 5-ppm NO/sub 2/ (German safety limit). Cross sensitivity to other gases (except NH/sub 3/) and interference of humidity was found to be negligibly small. The film was incorporated as a gate electrode in a hybrid suspended gate field effect transistor (HSGFET) structure to examine its suitability in FET-type sensors. The films were characterized using Rutherford backscattering spectroscopy, X-ray diffraction analysis, and scanning electron microscopy to determine their composition, phase, and surface morphology. The results suggest that iridium-oxide film is a promising material for the realization of a FET-based NO/sub 2/ sensor.</abstract><pub>IEEE</pub><doi>10.1109/JSEN.2004.823651</doi></addata></record> |
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| subjects | Annealing Kelvin Probes Safety Semiconductor films Sensor phenomena and characterization Silicon Sputtering Substrates Temperature sensors |
| title | Iridium oxide as low temperature NO/sub 2/-sensitive material for work function-based gas sensors |
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