Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET

We studied the total dose radiation effects from an X-ray source in submicron fully depleted n-channel field effect transistors on conventional SOI wafers, after substrate removal, and after buried oxide thinning. A significant enhancement in radiation tolerance is observed both after substrate remo...

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Veröffentlicht in:	IEEE transactions on nuclear science 2003-12, Vol.50 (6), p.1776-1783
Hauptverfasser:	Gouker, P., Burns, J., Wyatt, P., Warner, K., Austin, E., Milanowski, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Depletion Fabrication FETs Field effect transistors Ionizing radiation Leakage current MOSFET circuits Oxides Radiation effects Radiation tolerance Semiconductor device modeling Semiconductor devices Silicon on insulator technology Thinning Threshold voltage Transistors Wafers X-ray sources
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