Modeling of GaN electron mobility

An analytical model for temperature-dependent electron-mobility in GaN has been developed. Scattering mechanisms by ionized impurities, dislocations, acoustic phonons, and optical phonons where considered. Using this model, the behavior of the electron mobility as a function of the carrier concentra...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Abdel-Motaleb, I.M., Korotkov, R.Y.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Acoustic scattering Analytical models Electron mobility Gallium nitride Impurities Molecular beam epitaxial growth Optical scattering Phonons Predictive models Semiconductor process modeling
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