Modeling of GaN electron mobility
An analytical model for temperature-dependent electron-mobility in GaN has been developed. Scattering mechanisms by ionized impurities, dislocations, acoustic phonons, and optical phonons where considered. Using this model, the behavior of the electron mobility as a function of the carrier concentra...
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| creator | Abdel-Motaleb, I.M. Korotkov, R.Y. |
| description | An analytical model for temperature-dependent electron-mobility in GaN has been developed. Scattering mechanisms by ionized impurities, dislocations, acoustic phonons, and optical phonons where considered. Using this model, the behavior of the electron mobility as a function of the carrier concentration and temperature was accurately predicted. Samples grown using the metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were used to validate the model. The results show that this model can, accurately, predict the behavior of the mobility regardless of the method of growth used. |
| doi_str_mv | 10.1109/EDMO.2003.1259962 |
| format | Conference Proceeding |
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Scattering mechanisms by ionized impurities, dislocations, acoustic phonons, and optical phonons where considered. Using this model, the behavior of the electron mobility as a function of the carrier concentration and temperature was accurately predicted. Samples grown using the metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were used to validate the model. The results show that this model can, accurately, predict the behavior of the mobility regardless of the method of growth used.</description><identifier>ISBN: 9780780379046</identifier><identifier>ISBN: 0780379047</identifier><identifier>DOI: 10.1109/EDMO.2003.1259962</identifier><language>eng</language><publisher>IEEE</publisher><subject>Acoustic scattering ; Analytical models ; Electron mobility ; Gallium nitride ; Impurities ; Molecular beam epitaxial growth ; Optical scattering ; Phonons ; Predictive models ; Semiconductor process modeling</subject><ispartof>The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. 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Scattering mechanisms by ionized impurities, dislocations, acoustic phonons, and optical phonons where considered. Using this model, the behavior of the electron mobility as a function of the carrier concentration and temperature was accurately predicted. Samples grown using the metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were used to validate the model. The results show that this model can, accurately, predict the behavior of the mobility regardless of the method of growth used.</description><subject>Acoustic scattering</subject><subject>Analytical models</subject><subject>Electron mobility</subject><subject>Gallium nitride</subject><subject>Impurities</subject><subject>Molecular beam epitaxial growth</subject><subject>Optical scattering</subject><subject>Phonons</subject><subject>Predictive models</subject><subject>Semiconductor process modeling</subject><isbn>9780780379046</isbn><isbn>0780379047</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2003</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8FKw0AURQdEUGo-QNzED0h8781M3sxSaq1Caze6Li-ZGRlJG0my6d9bsJcDZ3fgKnWPUCOCf1q9bHc1AegayXrf0JUqPDs4o9mDaW5UMU0_cJ4xlhzcqsftEGKfj9_lkMq1fJSxj908DsfyMLS5z_PpTl0n6adYXLxQX6-rz-Vbtdmt35fPmyoj2LlCaTSB1py8SY4wOOOx1SLc2thxYnJshNEFELAYoeEgEAyhJuks6IV6-O_mGOP-d8wHGU_7yxH9B1dBO3U</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>Abdel-Motaleb, I.M.</creator><creator>Korotkov, R.Y.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2003</creationdate><title>Modeling of GaN electron mobility</title><author>Abdel-Motaleb, I.M. ; Korotkov, R.Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-1a6320337f94f821d8491b3aa7b5ec7f72874a718d0a051e067da0d42132ac503</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Acoustic scattering</topic><topic>Analytical models</topic><topic>Electron mobility</topic><topic>Gallium nitride</topic><topic>Impurities</topic><topic>Molecular beam epitaxial growth</topic><topic>Optical scattering</topic><topic>Phonons</topic><topic>Predictive models</topic><topic>Semiconductor process modeling</topic><toplevel>online_resources</toplevel><creatorcontrib>Abdel-Motaleb, I.M.</creatorcontrib><creatorcontrib>Korotkov, R.Y.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Abdel-Motaleb, I.M.</au><au>Korotkov, R.Y.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Modeling of GaN electron mobility</atitle><btitle>The 11th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003</btitle><stitle>EDMO</stitle><date>2003</date><risdate>2003</risdate><spage>12</spage><epage>17</epage><pages>12-17</pages><isbn>9780780379046</isbn><isbn>0780379047</isbn><abstract>An analytical model for temperature-dependent electron-mobility in GaN has been developed. Scattering mechanisms by ionized impurities, dislocations, acoustic phonons, and optical phonons where considered. Using this model, the behavior of the electron mobility as a function of the carrier concentration and temperature was accurately predicted. Samples grown using the metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were used to validate the model. The results show that this model can, accurately, predict the behavior of the mobility regardless of the method of growth used.</abstract><pub>IEEE</pub><doi>10.1109/EDMO.2003.1259962</doi><tpages>6</tpages></addata></record> |
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| identifier | ISBN: 9780780379046 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Acoustic scattering Analytical models Electron mobility Gallium nitride Impurities Molecular beam epitaxial growth Optical scattering Phonons Predictive models Semiconductor process modeling |
| title | Modeling of GaN electron mobility |
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