Modeling of GaN electron mobility

An analytical model for temperature-dependent electron-mobility in GaN has been developed. Scattering mechanisms by ionized impurities, dislocations, acoustic phonons, and optical phonons where considered. Using this model, the behavior of the electron mobility as a function of the carrier concentration and temperature was accurately predicted. Samples grown using the metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were used to validate the model. The results show that this model can, accurately, predict the behavior of the mobility regardless of the method of growth used.