Trench sidewall doping for lateral power devices [ion implantation]
Sidewall doping of trenches with a high aspect ratio and a high grade of anisotropy (90/spl deg//spl plusmn/0.5/spl deg/) by ion implantation has been investigated. Two-dimensional (2D) process simulation and delineation experiments have shown a good agreement between simulation and experimental res...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 382 |
|---|---|
| container_issue | |
| container_start_page | 379 |
| container_title | |
| container_volume | |
| creator | Berberich, S.E. Bauer, A.J. Frey, L. Ryssell, H. |
| description | Sidewall doping of trenches with a high aspect ratio and a high grade of anisotropy (90/spl deg//spl plusmn/0.5/spl deg/) by ion implantation has been investigated. Two-dimensional (2D) process simulation and delineation experiments have shown a good agreement between simulation and experimental results. The doping of the trenches has been evaluated in order to manufacture functional wells for lateral power devices. 2D device simulation has been performed to compare optimized sidewall profiles of lateral power devices with the profiles reached by ion implantation. From these data, the process parameters for the ion implantation process referring to optimal device performance have been determined. |
| doi_str_mv | 10.1109/ESSDERC.2003.1256893 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_1256893</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1256893</ieee_id><sourcerecordid>1256893</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-e25e9a066a16f55cecea5df484cb50aae217d5c02328e4ffb938e1b3432735753</originalsourceid><addsrcrecordid>eNotj9FKwzAUhgMiqHNPoBd5gdYkp2mSS6nVCQPBzSuRcZqeaKRrS1ocvr0D9998fDcf_IzdSpFLKdxdvdk81K9VroSAXCpdWgdn7EoYK8A45-CCLafpWxxXaHDGXrJqm6j3X3yKLR2w63g7jLH_5GFIvMOZEnZ8HA6UeEs_0dPE3-PQ87gfO-xnnI_ycc3OA3YTLU9csLfHelutsvXL03N1v86iNHrOSGlyKMoSZRm09uQJdRsKW_hGC0RS0rTaCwXKUhFC48CSbKAAZUAbDQt289-NRLQbU9xj-t2dfsIfMTFKPA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Trench sidewall doping for lateral power devices [ion implantation]</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Berberich, S.E. ; Bauer, A.J. ; Frey, L. ; Ryssell, H.</creator><creatorcontrib>Berberich, S.E. ; Bauer, A.J. ; Frey, L. ; Ryssell, H.</creatorcontrib><description>Sidewall doping of trenches with a high aspect ratio and a high grade of anisotropy (90/spl deg//spl plusmn/0.5/spl deg/) by ion implantation has been investigated. Two-dimensional (2D) process simulation and delineation experiments have shown a good agreement between simulation and experimental results. The doping of the trenches has been evaluated in order to manufacture functional wells for lateral power devices. 2D device simulation has been performed to compare optimized sidewall profiles of lateral power devices with the profiles reached by ion implantation. From these data, the process parameters for the ion implantation process referring to optimal device performance have been determined.</description><identifier>ISBN: 0780379993</identifier><identifier>ISBN: 9780780379992</identifier><identifier>DOI: 10.1109/ESSDERC.2003.1256893</identifier><language>eng</language><publisher>IEEE</publisher><subject>Chemical vapor deposition ; Dielectric substrates ; Doping profiles ; Glass ; Insulated gate bipolar transistors ; Ion implantation ; Isolation technology ; Manufacturing processes ; Silicon on insulator technology ; Voltage</subject><ispartof>ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.379-382</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1256893$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1256893$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Berberich, S.E.</creatorcontrib><creatorcontrib>Bauer, A.J.</creatorcontrib><creatorcontrib>Frey, L.</creatorcontrib><creatorcontrib>Ryssell, H.</creatorcontrib><title>Trench sidewall doping for lateral power devices [ion implantation]</title><title>ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003</title><addtitle>ESSDERC</addtitle><description>Sidewall doping of trenches with a high aspect ratio and a high grade of anisotropy (90/spl deg//spl plusmn/0.5/spl deg/) by ion implantation has been investigated. Two-dimensional (2D) process simulation and delineation experiments have shown a good agreement between simulation and experimental results. The doping of the trenches has been evaluated in order to manufacture functional wells for lateral power devices. 2D device simulation has been performed to compare optimized sidewall profiles of lateral power devices with the profiles reached by ion implantation. From these data, the process parameters for the ion implantation process referring to optimal device performance have been determined.</description><subject>Chemical vapor deposition</subject><subject>Dielectric substrates</subject><subject>Doping profiles</subject><subject>Glass</subject><subject>Insulated gate bipolar transistors</subject><subject>Ion implantation</subject><subject>Isolation technology</subject><subject>Manufacturing processes</subject><subject>Silicon on insulator technology</subject><subject>Voltage</subject><isbn>0780379993</isbn><isbn>9780780379992</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2003</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj9FKwzAUhgMiqHNPoBd5gdYkp2mSS6nVCQPBzSuRcZqeaKRrS1ocvr0D9998fDcf_IzdSpFLKdxdvdk81K9VroSAXCpdWgdn7EoYK8A45-CCLafpWxxXaHDGXrJqm6j3X3yKLR2w63g7jLH_5GFIvMOZEnZ8HA6UeEs_0dPE3-PQ87gfO-xnnI_ycc3OA3YTLU9csLfHelutsvXL03N1v86iNHrOSGlyKMoSZRm09uQJdRsKW_hGC0RS0rTaCwXKUhFC48CSbKAAZUAbDQt289-NRLQbU9xj-t2dfsIfMTFKPA</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>Berberich, S.E.</creator><creator>Bauer, A.J.</creator><creator>Frey, L.</creator><creator>Ryssell, H.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2003</creationdate><title>Trench sidewall doping for lateral power devices [ion implantation]</title><author>Berberich, S.E. ; Bauer, A.J. ; Frey, L. ; Ryssell, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-e25e9a066a16f55cecea5df484cb50aae217d5c02328e4ffb938e1b3432735753</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Chemical vapor deposition</topic><topic>Dielectric substrates</topic><topic>Doping profiles</topic><topic>Glass</topic><topic>Insulated gate bipolar transistors</topic><topic>Ion implantation</topic><topic>Isolation technology</topic><topic>Manufacturing processes</topic><topic>Silicon on insulator technology</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Berberich, S.E.</creatorcontrib><creatorcontrib>Bauer, A.J.</creatorcontrib><creatorcontrib>Frey, L.</creatorcontrib><creatorcontrib>Ryssell, H.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Berberich, S.E.</au><au>Bauer, A.J.</au><au>Frey, L.</au><au>Ryssell, H.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Trench sidewall doping for lateral power devices [ion implantation]</atitle><btitle>ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003</btitle><stitle>ESSDERC</stitle><date>2003</date><risdate>2003</risdate><spage>379</spage><epage>382</epage><pages>379-382</pages><isbn>0780379993</isbn><isbn>9780780379992</isbn><abstract>Sidewall doping of trenches with a high aspect ratio and a high grade of anisotropy (90/spl deg//spl plusmn/0.5/spl deg/) by ion implantation has been investigated. Two-dimensional (2D) process simulation and delineation experiments have shown a good agreement between simulation and experimental results. The doping of the trenches has been evaluated in order to manufacture functional wells for lateral power devices. 2D device simulation has been performed to compare optimized sidewall profiles of lateral power devices with the profiles reached by ion implantation. From these data, the process parameters for the ion implantation process referring to optimal device performance have been determined.</abstract><pub>IEEE</pub><doi>10.1109/ESSDERC.2003.1256893</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 0780379993 |
| ispartof | ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.379-382 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_1256893 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Chemical vapor deposition Dielectric substrates Doping profiles Glass Insulated gate bipolar transistors Ion implantation Isolation technology Manufacturing processes Silicon on insulator technology Voltage |
| title | Trench sidewall doping for lateral power devices [ion implantation] |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T15%3A35%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Trench%20sidewall%20doping%20for%20lateral%20power%20devices%20%5Bion%20implantation%5D&rft.btitle=ESSDERC%20'03.%2033rd%20Conference%20on%20European%20Solid-State%20Device%20Research,%202003&rft.au=Berberich,%20S.E.&rft.date=2003&rft.spage=379&rft.epage=382&rft.pages=379-382&rft.isbn=0780379993&rft.isbn_list=9780780379992&rft_id=info:doi/10.1109/ESSDERC.2003.1256893&rft_dat=%3Cieee_6IE%3E1256893%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1256893&rfr_iscdi=true |