New Fowler Nordheim current determination in EEPROM cell from transient measurements

New Fowler Nordheim current determination in EEPROM cell from transient measurements

In this work, we present a new simple method to determine the actual tunnel current in EEPROM cell during erase operation. From this method, we compare the classically tunneling current measured on large test capacitor and the real current of the tunnelling area. The result obtained from such. trans...

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Bibliographische Detailangaben
Hauptverfasser: Laffont, R., Masson, P., Canet, P., Delsuc, B., Bouchakour, R., Mirabel, J.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Application specific integrated circuits
Area measurement
Current measurement
EPROM
Equivalent circuits
MOS capacitors
Nonvolatile memory
Testing
Transient analysis
Tunneling
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Beschreibung
Zusammenfassung:In this work, we present a new simple method to determine the actual tunnel current in EEPROM cell during erase operation. From this method, we compare the classically tunneling current measured on large test capacitor and the real current of the tunnelling area. The result obtained from such. transient analysis must improve the tunneling current modeling which is major parameter in the EEPROM cell behavior. Moreover our approach can be use for the verification of the injection current in case of write or erase cell operation disturb.
DOI:10.1109/ESSDERC.2003.1256813