MIS capacitor radiation sensor with giant internal signal amplification on a base of UHR epi silicon [photodetector]

The theoretical model of a new metal-insulator-semiconductor (MIS) radiation sensor, possessing a giant internal signal amplification, is proposed, to describe the experimentally obtained results. The sensor is fabricated on an ultra-high resistivity (UHR) epi layer (>10 k/spl Omega//spl middot/c...

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Bibliographische Detailangaben

Hauptverfasser:	Malik, A., Grimalsky, V., Tsou, M.C., Durini, D., Chi-Tang Lo
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Astrophysics Capacitive sensors Capacitors Circuits Conductivity Pulse generation Semiconductor device modeling Silicon Titanium Voltage
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