Influence of bonding thickness on stability of integrated circuits at effect of electromagnetic fields

Influence of bonding thickness on stability of integrated circuits at effect of electromagnetic fields

The technique of numerical calculation of stability integrated circuits is adduced depending on thickness (depth) of bonding at effect of pulse electromagnetic fields. The data on influencing depth of inhomogeneous bonding on threshold values of an electric field strength of a dropping electromagnet...

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Bibliographische Detailangaben
Hauptverfasser: Starostenko, V.V., Grygoriev, Ye.V., Taran, Ye.P., Rukavishnikov, A.V.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bonding
Circuit stability
CMOS technology
Electromagnetic fields
EMP radiation effects
IEEE catalog
Integrated circuit technology
Organizing
Pulse circuits
Radio frequency
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Beschreibung
Zusammenfassung:The technique of numerical calculation of stability integrated circuits is adduced depending on thickness (depth) of bonding at effect of pulse electromagnetic fields. The data on influencing depth of inhomogeneous bonding on threshold values of an electric field strength of a dropping electromagnetic wave are obtained.
DOI:10.1109/CRMICO.2003.158959